A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, the second particles contain a cerium compound, and in a case where a content of the abrasive grains is 0.1% by mass, a BET specific surface area of a solid phase obtained when the slurry is subjected to centrifugal separation for 60 minutes at a centrifugal acceleration of 1.1×10.sup.4 G is 40 m.sup.2/g or more.

Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

A polishing composition according to the present invention includes: silica; an anionic water-soluble polymer; at least one compound selected from the group consisting of a phosphonate group-containing compound, a phosphate group-containing compound, and an amino group-containing compound; and a dispersing medium.

A polishing slurry including a fullerene derivative and at least one compound having at least one positively-charged functional group, and a method of manufacturing a semiconductor device using the polishing slurry.

A polishing slurry including a fullerene derivative including a metal cation, a method of preparing the polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry.

A chemical mechanical polishing composition may be used for chemical mechanical polishing of a substrate including (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition includes (A) inorganic particles (B) at least one organic compound including an amino-group and an acid group, the compound including n amino groups and at least n+1 acidic protons, a being a integer ≥1; (C) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the MP composition; and (D) an aqueous medium. The CMP composition may have a pH of more than 6 and less than 9.

A composition including a carrier comprising a liquid, an abrasive particulate contained in the carrier, an accelerant contained in the carrier, the accelerant including at least one free anion selected from the group of iodide (I.sup.−), bromide (Br.sup.−), fluoride (F.sup.−), sulfate (SO.sub.4.sup.2−), sulfide (S.sup.2−), sulfite (SO.sub.3.sup.2−), chloride (Cl.sup.−), silicate (SiO.sub.4.sup.4−), phosphate (PO.sub.4.sup.3−), nitrate (NO.sub.3.sup.−), carbonate (CO.sub.3.sup.2−), perchlorate (ClO.sub.4.sup.−), or any combination thereof, and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from M.sub.aF.sub.x, N.sub.bF.sub.x, M.sub.aN.sub.bF.sub.x, M.sub.aI.sub.x, N.sub.bI.sub.x, M.sub.aN.sub.bI.sub.x, M.sub.aBr.sub.x, N.sub.bBr.sub.x, M.sub.aN.sub.bBr.sub.x, M.sub.a(SO.sub.4).sub.x, N.sub.b(SO.sub.4).sub.x, MaN.sub.b(SO.sub.4).sub.x, M.sub.aS.sub.x, N.sub.bS.sub.x, M.sub.aN.sub.bS.sub.x, M.sub.a(SiO.sub.4).sub.x, N.sub.b(SiO.sub.4).sub.x, M.sub.aN.sub.b(SiO.sub.4).sub.x, M.sub.a(PO.sub.4).sub.x, N.sub.b(PO.sub.4).sub.x, M.sub.aN.sub.b(PO.sub.4).sub.x, M.sub.a(NO.sub.3).sub.x, N.sub.b(NO.sub.3).sub.x, M.sub.aN.sub.b(NO.sub.3).sub.x, M.sub.a(CO.sub.3).sub.x, N.sub.b(CO.sub.3).sub.x, M.sub.aN.sub.b(CO.sub.3).sub.x, or any combination, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6.

An etching composition for silicon nitride layers and a method of etching a silicon nitride layer using the composition, the etching composition including an inorganic acid or a salt thereof; a solvent; an acid-modified silica or an acid-modified silicic acid; and a cyclic compound containing four or more nitrogen atoms.

A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.