A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.

A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

Provided are an abrasive, a polishing composition, and a polishing method capable of polishing the surface of an alloy or metal oxide at a sufficient polishing removal rate and providing a high-quality mirror surface. The abrasive contains alumina having an -conversion rate of 80% or more and having a 50% particle diameter, in a volume-based cumulative particle diameter distribution, of 0.15 m or more to 0.35 m or less. The polishing composition contains this abrasive and has a pH of 7 or less. These abrasive and polishing composition are used for polishing polishing objects containing at least one of an alloy and a metal oxide.

A polishing liquid containing: abrasive grains; a hydroxy acid; a polymer compound having at least one selected from the group consisting of a hydroxyl group and an amide group; and a liquid medium, in which a zeta potential of the abrasive grains is positive, and a weight average molecular weight of the polymer compound is 3000 or more.

Disclosed is a slurry screeding mechanism used in the production process of the SG abrasive. The slurry screeding mechanism includes a screeding main support; a screeding plate which is connected with the screeding main support through a suspension component so that the screeding plate is suspended, and a damping spring is arranged in the suspension component; and a torsion spring adjusting component, wherein the torsion spring adjusting component includes a plurality of torsion springs supported by a torsion spring support shaft; the torsion spring support shaft is fixed on the screeding main support; the torsion spring support shaft can move up and down relative to the screeding main support; the torsion springs are clamped in a V-shaped plate; an end side of the V-shaped plate is connected with the screeding main support; and a side surface of the V-shaped plate is connected with the screeding plate.

According to an aspect of the present invention, there is provided a polishing liquid containing abrasive grains, a hydroxy acid, a polyol, at least one zwitterionic compound selected from the group consisting of an aminocarboxylic acid and an aminosulfonic acid, and a liquid medium, in which a zeta potential of the abrasive grains is positive, an isoelectric point of the aminocarboxylic acid is smaller than 7.0, and pKa of the aminosulfonic acid is larger than 0.

Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

A polishing slurry including a composite including a hydrophilic fullerene and an ionic compound, a method of manufacturing the same, and a method of manufacturing a semiconductor device.

Slurry compositions useable in chemical mechanical polishing processes, as well as methods of making and methods of using the same, are described.

An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below:

##STR00001## wherein: L.sup.1 to L.sup.3 are independently substituted or unsubstituted hydrocarbylene, R.sup.1 to R.sup.4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and X.sup.n is an n-valent anion, where n is an integer of 1 to 3.