Provided herein is a solar cell module with which high output can be achieved through wavelength conversion of shorter wavelength light to longer wavelength light while extending life by removing ultraviolet light. A method of manufacture of the solar cell module is also provided. The solar cell module includes a back sheet, a first sealing material layer, a plurality of photoelectric conversion devices that are electrically connected to one another by an electrode material, a second sealing material layer, and a protective glass that are laminated in this order. The second sealing material layer is configured from a first layer, a second layer, and a third layer. The first layer is disposed in contact with the protective glass, and formed of a transparent material containing a phosphor. The third layer is disposed in contact with the photoelectric conversion, devices, and formed of a transparent material containing an ultraviolet absorber. The second layer is a transparent material disposed between the first layer and the third layer.

A phosphor having different light emission characteristics from the conventional phosphor, having high emission intensity and chemical and thermal stability, combined with LED of less than 450 nm. This phosphor includes an inorganic compound comprising: a crystal represented by Ba.sub.1Si.sub.4Al.sub.3N.sub.9, an inorganic crystal having the same crystal structure as Ba.sub.1Si.sub.4Al.sub.3N.sub.9 crystal, or a solid solution crystal thereof, comprising A element, D element, E element, and X element (A is one or more elements selected from Li, Mg, Ca, Sr, Ba, and La; D is one or more elements selected from Si, Ge, Sn, Ti, Zr, and Hf; E is one or more elements selected from B, Al, Ga, In, Sc, and Y; X is one or more elements selected from O, N, and F), into which M element is solid-solved (M is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb).

Embodiments of the present invention provide a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity and further a light-emitting device employing that phosphor. The phosphor is activated by manganese and has a basic structure comprising at least one element selected from the group consisting of potassium, sodium and calcium; at least one element selected from the group consisting of silicon and titanium; and fluorine. In an IR absorption spectrum of the phosphor, the intensity ratio of the peak in 3570 to 3610 cm.sup.−1 to that in 1200 to 1240 cm.sup.−1 is 0.1 or less.

Embodiments of the present invention provide a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity and further a light-emitting device employing that phosphor. The phosphor is activated by manganese and has a basic structure comprising at least one element selected from the group consisting of potassium, sodium and calcium; at least one element selected from the group consisting of silicon and titanium; and fluorine. In an IR absorption spectrum of the phosphor, the intensity ratio of the peak in 3570 to 3610 cm.sup.−1 to that in 1200 to 1240 cm.sup.−1 is 0.1 or less.

Provided is a phosphor, which is excited by a wide band of visible light, capable of emitting near-infrared light of high intensity. The phosphor comprises a crystal phase represented by a formula (1): MCuSi.sub.2O.sub.6 (where M comprises one or more of Ba, Sr and Ca), and a crystal phase represented by a formula (2): MCuSi.sub.4O.sub.10 (where M comprises one or more of Ba, Sr and Ca), wherein a ratio β of a diffraction peak intensity of MCuSi.sub.4O.sub.10 with respect to a diffraction peak intensity of MCuSi.sub.2O.sub.6 in an X-ray diffraction (XRD) pattern obtained by powder XRD measurement using CuKα rays is 0<β≦0.50.

A highly reliable micromachine, display element, or the like is provided. As a micromachine or a transistor including the micromachine, a transistor including an oxide semiconductor in a semiconductor layer where a channel is formed is used. For example, a transistor including an oxide semiconductor is used as at least one transistor in one or a plurality of transistors driving a micromachine.

A highly reliable micromachine, display element, or the like is provided. As a micromachine or a transistor including the micromachine, a transistor including an oxide semiconductor in a semiconductor layer where a channel is formed is used. For example, a transistor including an oxide semiconductor is used as at least one transistor in one or a plurality of transistors driving a micromachine.

A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

Lighting systems, methods, and devices for protecting human circadian neuroendocrine function during night use are described. Suitable lighting conditions can be provided for a working environment while protecting the circadian neuroendocrine systems of those occupying the illuminated workplace during the night. Lighting systems, methods, and devices can provide substantive attenuation of the pathologic circadian disruption in night workers. Lighting systems, methods, and devices can attenuate the specific bands of light implicated in circadian disruption. LED lighting systems, methods, and devices can provide increased intensity at a different portion of the spectrum than conventional LEDs, providing a useable white light even when unfavorable portions of the wavelength are attenuated by a notch filter. LED lighting systems, methods, and devices can switch between a daytime configuration and a night time configuration, wherein the daytime configuration provides unfiltered light and the night time configuration provides filtered light.