A method of making nanoparticles including a semiconducting nitride is provided. The method includes reacting precursors in a gas phase to form the nanoparticles including the semiconducting nitride. The precursors include at least one of a gallium (Ga) precursor or an indium (In) precursor and a nitrogen (N) precursor. The semiconducting nitride is In.sub.1−xGa.sub.xN, where 0≤x≤1. Structures that include the nanoparticles and systems for making the nanoparticles are also provided.

A method of making nanoparticles including a semiconducting nitride is provided. The method includes reacting precursors in a gas phase to form the nanoparticles including the semiconducting nitride. The precursors include at least one of a gallium (Ga) precursor or an indium (In) precursor and a nitrogen (N) precursor. The semiconducting nitride is In.sub.1−xGa.sub.xN, where 0≤x≤1. Structures that include the nanoparticles and systems for making the nanoparticles are also provided.

A method for producing a Group III-V semiconductor nanoparticle by flow reaction, including: introducing a solution of compound containing Group III element into a first flow channel, introducing a solution of compound containing Group V element into a second flow channel, and combining the solutions to produce nanoparticles, in which the combining portion is constituted by a multi-layered tubular mixer, one of the solutions is allowed to flow through a flow channel in the smallest tube of the mixer, and the other of the solutions is allowed to flow through a flow channel adjacent to the flow channel in the smallest tube, and a value of a ratio of linear velocity of the solution flowing in the flow channel adjacent to the flow channel in the smallest tube to linear velocity of the solution flowing in the flow channel in the smallest tube is a specific value.

A method for producing a Group III-V semiconductor nanoparticle by flow reaction, including: introducing a solution of compound containing Group III element into a first flow channel, introducing a solution of compound containing Group V element into a second flow channel, and combining the solutions to produce nanoparticles, in which the combining portion is constituted by a multi-layered tubular mixer, one of the solutions is allowed to flow through a flow channel in the smallest tube of the mixer, and the other of the solutions is allowed to flow through a flow channel adjacent to the flow channel in the smallest tube, and a value of a ratio of linear velocity of the solution flowing in the flow channel adjacent to the flow channel in the smallest tube to linear velocity of the solution flowing in the flow channel in the smallest tube is a specific value.

The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

The present disclosure relates generally to nanoparticle formulations, and more specifically to nanoparticle and ligands used for imparting low-pH solubility in a range of solvents, including photoluminescent materials such as quantum dots.

The present disclosure relates generally to nanoparticle formulations, and more specifically to nanoparticle and ligands used for imparting low-pH solubility in a range of solvents, including photoluminescent materials such as quantum dots.

A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

A quantum dot, and a quantum dot composite and a device including the same, wherein the quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well layer disposed on the seed and a shell disposed on the quantum well layer, the shell including a second semiconductor nanocrystal, and wherein the quantum dot does not include cadmium, wherein the first semiconductor nanocrystal includes a first zinc chalcogenide, wherein the second semiconductor nanocrystal includes a second zinc chalcogenide, and the quantum well layer includes an alloy semiconductor nanocrystal including indium (In), phosphorus (P), and gallium (Ga), and wherein a bandgap energy of the alloy semiconductor nanocrystal is less than a bandgap energy of the first semiconductor nanocrystal and less than a bandgap energy of the second semiconductor nanocrystal.