Quantum dots that are cadmium-free and/or stoichiometncally tuned are disclosed, as are methods of making them. Inclusion of the quantum dots and others in a stabilizing polymer matrix is also disclosed. The polymers are chosen for their strong binding affinity to the outer layers of the quantum dots such that the bond dissociation energy between the polymer material and the quantum dot is greater than the energy required to reach the melt temperature of the cross-linked polymer.

Novel iridium complexes containing a tetradentate or a hexadentate ligand, wherein a part of the ligand that is coordinated to iridium comprise an acetylacetonate structure. These complexes are useful as emitters for phosphorescent OLEDs.

A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

Surface-modified nanoparticles are produced by associating ligand interactive agents with the surface of a nanoparticle. The ligand interactive agents are bound to surface modifying ligands that are tailored to impart particular solubility and/or compatibility properties. The ligand interactive agents are crosslinked via a linking/crosslinking agent, such as hexamethoxymethylmelamine or a derivative thereof. The linking/crosslinking agent may provide a binding site for binding the surface modifying ligands to the ligand interactive agents.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

A display device according to an embodiment of the present disclosure may include a lower substrate disposed with a line electrode at an upper portion thereof, a plurality of semiconductor light emitting devices electrically connected to the line electrode to generate light, a wavelength converter disposed on the semiconductor light emitting device to convert a wavelength of light generated from the semiconductor light emitting device, and a conductive adhesive layer comprising conductors configured to electrically connect the lower substrate to the semiconductor light emitting device and a body configured to surround the conductors, wherein the semiconductor light emitting device has a composition formula of In.sub.xAl.sub.yGa.sub.1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

A display device according to an embodiment of the present disclosure may include a lower substrate disposed with a line electrode at an upper portion thereof, a plurality of semiconductor light emitting devices electrically connected to the line electrode to generate light, a wavelength converter disposed on the semiconductor light emitting device to convert a wavelength of light generated from the semiconductor light emitting device, and a conductive adhesive layer comprising conductors configured to electrically connect the lower substrate to the semiconductor light emitting device and a body configured to surround the conductors, wherein the semiconductor light emitting device has a composition formula of In.sub.xAl.sub.yGa.sub.1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

Provided are: a method of preparing a quantum dot, the method including preparing a first particle including a Group III-V compound including gallium (Ga) and treating the first particle with an aluminum (Al) composition including an aluminum (Al) precursor; a quantum dot manufactured by the method; an optical member including the quantum dot; and an electronic apparatus including the quantum dot.

Provided are: a method of preparing a quantum dot, the method including preparing a first particle including a Group III-V compound including gallium (Ga) and treating the first particle with an aluminum (Al) composition including an aluminum (Al) precursor; a quantum dot manufactured by the method; an optical member including the quantum dot; and an electronic apparatus including the quantum dot.

Halide-based scintillator materials, and related systems and methods are generally described. In some embodiments, the scintillator materials are thallium-based and/or have a perovskite structure. Specific embodiments of thallium calcium halides and thallium magnesium halides with desirable scintillation properties are provided.