A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same. The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

The present application discloses a manufacturing method of an optical film and the optical film. The manufacturing method includes: step S10, mixing titanium source precursors and a barium source and adding an alkaline agent for a reaction to obtain nanoparticles; and step S20, mixing quantum dots, an organic adhesive, and the nanoparticles followed by coating to obtain the optical film.

A scintillator, a preparation method therefor, and an application thereof are disclosed wherein the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yCe, wherein: A is at least one rare earth element selected from trivalent rare earth elements; B is at least one halogen element selected from halogen elements; a=1, b=2 and c=7, a=2, b=1 and c=5, or a=3, b=1 and c=6; and y is greater than or equal to 0 and less than or equal to 0.5. According to another embodiment, the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yEu, wherein: A is an alkaline earth metal element; B is a halogen element; a=1, b=2 and c=5, or a=1, b=1 and c=3; and y is greater than or equal to 0 mol % and less than or equal to 50 mol %.

A scintillator, a preparation method therefor, and an application thereof are disclosed wherein the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yCe, wherein: A is at least one rare earth element selected from trivalent rare earth elements; B is at least one halogen element selected from halogen elements; a=1, b=2 and c=7, a=2, b=1 and c=5, or a=3, b=1 and c=6; and y is greater than or equal to 0 and less than or equal to 0.5. According to another embodiment, the scintillator has a chemical formula of Tl.sub.aA.sub.bB.sub.c:yEu, wherein: A is an alkaline earth metal element; B is a halogen element; a=1, b=2 and c=5, or a=1, b=1 and c=3; and y is greater than or equal to 0 mol % and less than or equal to 50 mol %.

A method for producing coated semiconductor nanoparticles, comprising a step of coating the surface of semiconductor nanoparticles with a metal oxide, wherein the surface of the semiconductor nanoparticles is coated with the metal oxide by treating a metal oxide precursor with microwave irradiation treatment.

A display device including a light source (A), a color conversion layer (B), and a color filter (C), wherein the color conversion layer (B) contains quantum dots (B-r) that emit red light, the color filter (C) has a blue color filter (C-b), a green color filter (C-g), and a red color filter (C-r), and the display device satisfies α≤1.80 and (II) β≥63.0.

A wavelength conversion member, is provided with a wavelength conversion layer that includes quantum dots and is interposed between two barrier layers. The wavelength conversion member includes a light scattering layer that is provided between the barrier layers and the wavelength conversion layer, in which one of the barrier layers closest to the light scattering layer is formed of an inorganic component, the light scattering layer includes a binder, which is formed of either a compound having a hydrogen bonding functional group and a polymerizable group in a molecule or an organic metal coupling agent, and scattering particles having a diameter R of 0.2 to 5 μm, a thickness d of the light scattering layer is 0.2 to 4 μm, a thickness D of the wavelength conversion layer is 10 to 100 μm, and a ratio of d to D is 0.2% to 10%.

A semiconductor phosphor nanoparticle includes a semiconductor nanoparticle core containing a compound semiconductor, a shell layer coating the semiconductor nanoparticle core, and a modifying organic compound bonded to the shell layer through siloxane bonding. The modifying organic compound has an alkyl chain.

A wavelength conversion member, comprises: a substrate; a first wavelength conversion layer on the substrate, the first wavelength conversion layer containing a first phosphor and a first matrix; and a second wavelength conversion layer containing a second phosphor, first inorganic particles, and a second matrix. The first phosphor and the second phosphor convert at least part of the excitation light incident on the second main surface into first light having longer wavelengths than the excitation light. The first light is emitted from the second main surface of the second wavelength conversion layer. A volume Vp1 of the first phosphor, a volume Vw1 of the first wavelength conversion layer, a volume Vp2 of the second phosphor, and a volume Vw2 of the second wavelength conversion layer satisfy Vp1/Vw1>Vp2/Vw2.

A phosphor component that includes a plurality of nanowires absorbing light at one wavelength and emitting light at a longer wavelength, the longer wavelength being from about 495 nm to about 780 nm, each one of the plurality of nanowires being one of a nanowire described by a composition formula of InxGa1-.sub.xN, .sub.x being between about 0.1 to about 0.6 or a GaN nanowire having In.sub.xGa1-.sub.xN discs in a nanowire structure, x being between about 0.1 to about 0.8 and a light emitting device using the phosphor component are disclosed.