Provided are: a method of preparing a quantum dot, the method including preparing a first particle including a Group III-V compound including gallium (Ga) and treating the first particle with an aluminum (Al) composition including an aluminum (Al) precursor; a quantum dot manufactured by the method; an optical member including the quantum dot; and an electronic apparatus including the quantum dot.

Provided are: a method of preparing a quantum dot, the method including preparing a first particle including a Group III-V compound including gallium (Ga) and treating the first particle with an aluminum (Al) composition including an aluminum (Al) precursor; a quantum dot manufactured by the method; an optical member including the quantum dot; and an electronic apparatus including the quantum dot.

The present invention provides for a composition comprising a pigment, wherein the composition is suitable for coating a surface that is, or is expected to be, exposed to the sun. The pigment comprises particles that fluoresce in sunlight, thereby remaining cooler in the sun than coatings pigmented with non-fluorescent particles. The particles comprise solids that fluoresce or glow in the visible or near infrared (NIR) spectra, or that fluoresce when doped. Suitable dopants include, but are not limited to, ions of rare earths and transition metals. A coating composition includes: (i) a film-forming resin; (ii) an infrared reflective pigment; and (iii) an infrared fluorescent pigment different from the infrared reflective pigment. When the coating composition is cured to form a coating and exposed to radiation comprising fluorescence-exciting radiation, the coating has a greater effective solar reflectance (ESR) compared to the same coating exposed to the radiation comprising fluorescence-exciting radiation except without the infrared fluorescent pigment. A multi-layer coating including the coating composition, and a substrate at least partially coated with the coating composition is also disclosed. A method of reducing temperature of an article includes applying the coating composition to at least a portion of the article.

An (oxy)nitride phosphor powder has a fluorescence peak wavelength of 610 to 625 nm and also has higher external quantum efficiency than the conventional one. The (oxy)nitride phosphor powder includes an α-type SiAlON and aluminum nitride, represented by the compositional formula: Ca.sub.x1Eu.sub.x2Si.sub.12−(y+z)Al.sub.(y+z)O.sub.zN.sub.16−z wherein x1, x2, y, z fulfill the following formulae: 1.60≦x1+x2≦2.90, 0.18≦x2/x1≦0.70, 4.0≦y≦6.5, 0.0≦z≦1.0. The powder can additionally contain Li in an amount of 50 to 10000 ppm. The content of the aluminum nitride may be more than 0 mass % to less than 33 mass %.

A phosphor having different light emission characteristics from the conventional phosphor, having high emission intensity and chemical and thermal stability, combined with LED of less than 450 nm. This phosphor includes an inorganic compound comprising: a crystal represented by Ba.sub.1Si.sub.4Al.sub.3N.sub.9, an inorganic crystal having the same crystal structure as Ba.sub.1Si.sub.4Al.sub.3N.sub.9 crystal, or a solid solution crystal thereof, comprising A element, D element, E element, and X element (A is one or more elements selected from Li, Mg, Ca, Sr, Ba, and La; D is one or more elements selected from Si, Ge, Sn, Ti, Zr, and Hf; E is one or more elements selected from B, Al, Ga, In, Sc, and Y; X is one or more elements selected from O, N, and F), into which M element is solid-solved (M is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, and Yb).

A method for producing coated semiconductor nanoparticles, comprising a step of coating the surface of semiconductor nanoparticles with a metal oxide, wherein the surface of the semiconductor nanoparticles is coated with the metal oxide by treating a metal oxide precursor with microwave irradiation treatment.

A wavelength conversion member, is provided with a wavelength conversion layer that includes quantum dots and is interposed between two barrier layers. The wavelength conversion member includes a light scattering layer that is provided between the barrier layers and the wavelength conversion layer, in which one of the barrier layers closest to the light scattering layer is formed of an inorganic component, the light scattering layer includes a binder, which is formed of either a compound having a hydrogen bonding functional group and a polymerizable group in a molecule or an organic metal coupling agent, and scattering particles having a diameter R of 0.2 to 5 μm, a thickness d of the light scattering layer is 0.2 to 4 μm, a thickness D of the wavelength conversion layer is 10 to 100 μm, and a ratio of d to D is 0.2% to 10%.

A wavelength conversion member, is provided with a wavelength conversion layer that includes quantum dots and is interposed between two barrier layers. The wavelength conversion member includes a light scattering layer that is provided between the barrier layers and the wavelength conversion layer, in which one of the barrier layers closest to the light scattering layer is formed of an inorganic component, the light scattering layer includes a binder, which is formed of either a compound having a hydrogen bonding functional group and a polymerizable group in a molecule or an organic metal coupling agent, and scattering particles having a diameter R of 0.2 to 5 μm, a thickness d of the light scattering layer is 0.2 to 4 μm, a thickness D of the wavelength conversion layer is 10 to 100 μm, and a ratio of d to D is 0.2% to 10%.

Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Provided is a wavelength conversion member that is less decreased in luminescence intensity with time by irradiation with light of an LED or LD and a light emitting device using the wavelength conversion member. A wavelength conversion member is formed of an inorganic phosphor dispersed in a glass matrix, wherein the glass matrix contains, in % by mole, 30 to 85% SiO.sub.2, 4.3 to 20% B.sub.2O.sub.3, 0 to 25% Al.sub.2O.sub.3, 0 to 3% Li.sub.2O, 0 to 3% Na.sub.2O, 0 to 3% K.sub.2O, 0 to 3% Li.sub.2O+Na.sub.2O+K.sub.2O, 0 to 35% MgO, 0 to 35% CaO, 0 to 35% SrO, 0 to 35% BaO, 0.1 to 45% MgO+CaO+SrO+BaO, and 0 to 5% ZnO, and the inorganic phosphor is at least one selected from the group consisting of an oxide phosphor, a nitride phosphor, an oxynitride phosphor, a chloride phosphor, an oxychloride phosphor, a halide phosphor, an aluminate phosphor, and a halophosphate phosphor.