Described are luminescent components with excellent performance and stability. The luminescent components comprise a solid material composition comprising luminescent crystals 11 from the class of perovskite crystals, embedded in a solid matrix 14 comprising a polymer P1 or Small Molecules SM1 and metal selected from Mg, Sr, Ba, Sc, Y, Zn, Cd, In, and Sb. Further described are components and devices comprising the same. Also described are methods for manufacturing such components and devices comprising such components and liquid compositions useful for such manufacturing.

Described are luminescent components with excellent performance and stability. The luminescent components comprise a solid material composition comprising luminescent crystals 11 from the class of perovskite crystals, embedded in a solid matrix 14 comprising a polymer P1 or Small Molecules SM1 and metal selected from Mg, Sr, Ba, Sc, Y, Zn, Cd, In, and Sb. Further described are components and devices comprising the same. Also described are methods for manufacturing such components and devices comprising such components and liquid compositions useful for such manufacturing.

Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.

There is provided a photodetector element including a first electrode layer; a second electrode layer; a photoelectric conversion layer provided between the first electrode layer and the second electrode layer; an electron transport layer provided between the first electrode layer and the photoelectric conversion layer; and a hole transport layer provided between the photoelectric conversion layer and the second electrode layer, in which the photoelectric conversion layer contains an aggregate of semiconductor quantum dots that contain a metal atom and contains a ligand coordinated to the semiconductor quantum dot, the hole transport layer contains an organic semiconductor, and the second electrode layer is formed of a metal material containing at least one metal atom selected from Au, Pt, Ir, Pd, Cu, Pb, Sn, Zn, Ti, W, Mo, Ta, Ge, Ni, Cr, or In. There is also provided an image sensor including the photodetector element.

Perovskite-polymer composites including perovskite nanocrystals dispersed in a polymer matrix, wherein the perovskite nanocrystals have an average size of from about nm to about 20 nm. Methods for producing a perovskite-polymer composites that may include contacting a solid material comprising a polymer matrix with a solution comprising a perovskite precursor; allowing the solution to penetrate the solid material to yield a swollen solid material comprising the perovskite precursor dispersed within the polymer matrix; optionally contacting the swollen solid material with an antisolvent; and annealing the swollen solid material to crystallize the perovskite precursor and to yield the perovskite-polymer composite comprising perovskite nanocrystals dispersed in the polymer matrix.

The invention refers in a first aspect to a solid polymer composition (100) comprising green luminescent crystals (1), non-perovskite red phosphor particles, and a polymer (3). The polymer (3) has a molar ratio of the sum of (oxygen+nitrogen) to carbon z, wherein z≤0.9, z≤0.75 in particular z≤0.4, in particular z≤0.3, in particular z≤0.25. A second aspect of the invention refers to a self-supporting film comprising the solid polymer composition (100) of the first aspect. A third aspect of the invention refers to a light emitting device comprising either the solid polymer composition (100) according to the first aspect of the invention or the self-supporting film according to the second aspect of the invention.

A sensitized composite scintillator which optionally interacts with ionizing radiation is provided having a vitreous or plastic matrix in which there are incorporated perovskite nanostructures which sensitize light emitters.

There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.

A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.