Patent classifications
C09K11/66
POLYMER, QUANTUM DOT COMPOSITION AND LIGHT-EMITTING DEVICE EMPLOYING THE SAME
A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I):
##STR00001##
wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification.
LIGHT-EMITTING MATERIAL, METHOD OF PREPARING THE SAME, AND LIGHT-EMITTING DEVICE INCLUDING THE LIGHT-EMITTING MATERIAL
A light-emitting material, including: a quantum dot represented by Formula 1; and Pb(SCN).sub.2, wherein a surface of the quantum dot is passivated by the Pb(SCN).sub.2, and wherein the light-emitting material has a stretching vibrational peak corresponding to a carbon-nitrogen triple bond in a range of about 2000 inverse centimeter to about 2100 inverse centimeter, as measured by infrared (IR) spectroscopy:
A.sup.1B.sup.1X.sup.1.sub.3 Formula 1
wherein, in Formula 1, A.sup.1 is at least one of a monovalent organic cation or a monovalent inorganic cation, B.sup.1 is Sn or Pb, and X.sup.1 is at least one halogen.
LIGHT-EMITTING MATERIAL, METHOD OF PREPARING THE SAME, AND LIGHT-EMITTING DEVICE INCLUDING THE LIGHT-EMITTING MATERIAL
A light-emitting material, including: a quantum dot represented by Formula 1; and Pb(SCN).sub.2, wherein a surface of the quantum dot is passivated by the Pb(SCN).sub.2, and wherein the light-emitting material has a stretching vibrational peak corresponding to a carbon-nitrogen triple bond in a range of about 2000 inverse centimeter to about 2100 inverse centimeter, as measured by infrared (IR) spectroscopy:
A.sup.1B.sup.1X.sup.1.sub.3 Formula 1
wherein, in Formula 1, A.sup.1 is at least one of a monovalent organic cation or a monovalent inorganic cation, B.sup.1 is Sn or Pb, and X.sup.1 is at least one halogen.
Perovskite film, method for producing the same, light-emitting device and solar cell
Stable perovskite films having substantially-no phase transition within a predetermined temperature range are disclosed. In the films, formation of carrier traps is suppressed. Thermally stable perovskite solar cells and light-emitting devices using the films are also disclosed.
Perovskite polymer composite
Disclosed herein is a polymeric film, the film comprising a polymeric matrix material, a plurality of perovskite nanocrystals and/or aggregates of perovskite nanocrystals dispersed throughout the polymeric matrix material. There is also disclosed a perovskite polymer resin composition, a perovskite-polymer resin composition, a perovskite ink and a method of forming a luminescent film using any one of the compositions or ink. Preferably, the perovskite material is a lead halide perovskite containing a cation selected from Cs, an alkylammonium ion, or a formamidinium ion. The polymeric matrix is preferably formed from monomers comprising a vinyl or an acrylate group.
OPTICAL ELEMENT, INFRARED SENSOR, SOLID-STATE IMAGING ELEMENT, AND MANUFACTURING METHOD FOR OPTICAL ELEMENT
An optical element includes a photoelectric conversion film and an inorganic substance-containing film containing at least one selected from the group consisting of a metal nitride and a metal oxynitride, in which the photoelectric conversion film contains a quantum dot or at least one compound semiconductor selected from the group consisting of a III-V group compound semiconductor, a II-VI group compound semiconductor, and a IV-IV group compound semiconductor, and the optical density of an inorganic substance-containing film is 0.5 or more per 1.0 μm of a film thickness at a wavelength of 1,550 nm.
DISPLAY MODULE AND MANUFACTURING METHOD AS THE SAME
A display module is disclosed. The display module includes a pixel that includes: first to third self-luminescence elements that are configured to emit light of an ultraviolet wavelength range; first to third color conversion layers respectively corresponding to light emitting surfaces of the first to third self-luminescence elements; a first color filter and a second color filter respectively corresponding to the first color conversion layer and the second color conversion layer; a transparent resin layer corresponding to the third color conversion layer and disposed on a same plane as a plane at which the first color filter and the second color filter are positioned; a transparent cover layer that covers the first color filter, the second color filter, and the transparent resin layer; and an ultraviolet (UV) cutoff filter that covers the transparent cover layer.
Radiation-emitting optoelectronic component
A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1−x*−y*−z*) Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.
Radiation-emitting optoelectronic component
A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi.sub.4Al.sub.3N.sub.9, SrSiAl.sub.2O.sub.3N.sub.2, BaSi.sub.2N.sub.2O.sub.2, ALi.sub.3XO.sub.4, M*.sub.(1−x*−y*−z*) Z*.sub.z*[A*.sub.a*B*.sub.b*C*.sub.c*D*.sub.d*E*.sub.e*N.sub.4-n*O.sub.n*], and combinations thereof.
Ink composition, film, and display
The present invention relates to an ink composition including a semiconductor nanoparticle (1) which contains a perovskite compound, and a curable resin composition (2), in which the ink composition may further include a solvent (3), a value of Z in Formula (a) of Z=(O2+O3+N2+N3)/(C2+C3) is 0.37 or less, O2, N2, and C2 represent the number of O atoms, the number of N atoms, and the number of C atoms, respectively, in the curable resin composition (2), and O3, N3, and C3 represent the number of O atoms, the number of N atoms, and the number of C atoms, respectively in the solvent (3).