This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. ##STR00001##
(R is as defined in the specification.)

The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. ##STR00001##
(R is as defined in the specification.)

The present invention provides: a liquid composition which can be suitably used for production of an optical film having a favorable fluorescence efficiency and includes quantum dots (A), a quantum dot-containing film obtained by drying and/or curing the liquid composition, an optical film for a light-emitting display element made of the quantum dot-containing film, a light-emitting display element panel including the optical film, and a light-emitting display equipped with the light-emitting display element panel. An ionic liquid (B), and a solvent (S) are incorporated into a liquid composition including quantum dots (A), in which the solvent (S) includes a solvent (S1), the solvent (S1) being a compound having a cyclic skeleton and including a heteroatom other than a hydrogen atom and a carbon atom.

ROSH compliant mixed quantum dot films are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.

Provided is a semiconductor nanoparticle-containing composition capable of forming a wavelength conversion layer that efficiently converts the wavelength of excitation light and exhibits sufficient luminescence intensity. An aspect of the semiconductor nanoparticle-containing composition of the present invention contains semiconductor nanoparticles (A) and a coloring matter (B) and further contains a polymerizable compound (C), in which the semiconductor nanoparticles (A) have a maximum emission wavelength in the range of 500 to 670 nm over a wavelength range of 300 to 780 nm, and the coloring matter (B) contains at least one selected from coloring matters (B1) to (B5) having specific structures.

A quantum dot-containing composition includes a quantum dot, a ligand having coordinating groups, which coordinates to the surface of the quantum dots, and the ligand is represented by Formula I. ##STR00001##
In Formula I, A is an organic group including one or more coordinating groups selected from an amino group, a carboxy group, a mercapto group, a phosphine group, and a phosphine oxide group, Z is an (n+m+l)-valent organic linking group, R is a group including an alkyl group, an alkenyl group, or an alkynyl group each of which may have a substituent, Y is a group having a polymer chain which has a degree of polymerization of 3 or greater and which includes a polyacrylate skeleton or the like. n and m are each independently 1 or greater, l is 0 or greater, and n+m+l is integer 3 or greater. At least two coordinating groups are included in a molecule.

A quantum dot-containing composition includes a quantum dot, a ligand having coordinating groups, which coordinates to the surface of the quantum dots, and the ligand is represented by Formula I. ##STR00001##
In Formula I, A is an organic group including one or more coordinating groups selected from an amino group, a carboxy group, a mercapto group, a phosphine group, and a phosphine oxide group, Z is an (n+m+l)-valent organic linking group, R is a group including an alkyl group, an alkenyl group, or an alkynyl group each of which may have a substituent, Y is a group having a polymer chain which has a degree of polymerization of 3 or greater and which includes a polyacrylate skeleton or the like. n and m are each independently 1 or greater, l is 0 or greater, and n+m+l is integer 3 or greater. At least two coordinating groups are included in a molecule.

Provided are a quantum dot material, a preparation method and use thereof. The quantum material includes a quantum dot, and a first cladding layer and a second cladding clad outside of the quantum dot, wherein the first cladding layer is located between the quantum dot and the second cladding layer. The quantum dot material provided herein has good water and oxygen barrier properties and good stability.