Tetrapod-shaped quantum dots having a tetrapod shape in which a core includes a plurality of arms, and each of the arms have a different growth degree depending on the crystal direction.

A quantum dot, a method of preparing the quantum dot, and an optical member and an electronic device, each including the quantum dot, are provided. The quantum dot includes: a core including a Group III-V semiconductor compound alloyed with gallium (Ga); a first shell surrounding the core; and a second shell surrounding the first shell, wherein the first shell includes a first compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the second shell includes a second compound that includes a Group II-VI semiconductor compound, a Group III-V semiconductor compound, or a Group III-VI semiconductor compound, the first compound and the second compound are different from each other, and the atomic percentages of specific elements in a material of the core, elemental ratios in the first shell and second shell with respect to the core satisfy certain ranges.

This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120° C. and 200° C.

This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120° C. and 200° C.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.

A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided:
A.sub.xA′.sub.(3+α−x)D.sub.(2+β)E.sub.(9+γ).  Chemical Formula 1
In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x≤3, −1<α<1, 3+α−x>0, −1<β<1, and −1<γ<1.

There are provided a photodetection element including a first electrode layer 11, a second electrode layer 12, a photoelectric conversion layer 13 provided between the first electrode layer 11 and the second electrode layer 12, an electron transport layer 21 provided between the first electrode layer 11 and the photoelectric conversion layer 13, and a hole transport layer 22 provided between the photoelectric conversion layer 13 and the second electrode layer 12, in which the photoelectric conversion layer 13 contains quantum dots of a compound semiconductor containing an Ag element and a Bi element, and the hole transport layer 22 contains an organic semiconductor A including a predetermined structure, and are provided an image sensor.

This disclosure relates to quantum dots with a core of III-V material, a first layer of II-VI material and an external shell of II-VI material to be used, for example, in downconverters. The external shell is preferably made of an alloy of Zn and Cd with Se or S. The inventors have demonstrated that introducing a small amount of Cd in the external shell provides excellent absorbance performance in blue, violet and UV wavelengths. The amount of Cd needed for this increase in absorbance can be very low. The inventors have shown that the emitted light can be nearly monochromatic, which is especially interesting in electronic applications.

A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.