In a semiconductor device, a quantum dot group includes a stack of plural quantum dot layers having different central wavelengths at which respective gains are maximum. A part of or all of the quantum dot layers are stacked so that the central wavelengths sequentially shifts along a stacking direction. The quantum dot group includes a longest wavelength layer group composed of some quantum dot layers including a longest wavelength layer having a longest central wavelength and at least one quantum dot layer stacked on the longest wavelength layer. The longest wavelength layer or the longest wavelength layer group has a larger gain at the central wavelength than the gain at the central wavelength of each of the other quantum dot layers.

The invention relates to an inorganic scintillator material of formula Lu.sub.(2−y)Y.sub.(y−z−x)Ce.sub.xM.sub.zSi.sub.(1−v)M′.sub.vO.sub.5, in which: M represents a divalent alkaline earth metal and M′ represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1.

In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.

Provided are nanophosphor-attached inorganic particles that can suppress the degradation of the nanophosphor when sealed in glass, and a wavelength conversion member using the nanophosphor-attached inorganic particles. The nanophosphor-attached inorganic particle 10 include: inorganic particles 1 having an average particle diameter of 1 μm or more; and a nanophosphor 2 attached to surfaces of the inorganic particles 1.

Provided are nanophosphor-attached inorganic particles that can suppress the degradation of the nanophosphor when sealed in glass, and a wavelength conversion member using the nanophosphor-attached inorganic particles. The nanophosphor-attached inorganic particle 10 include: inorganic particles 1 having an average particle diameter of 1 μm or more; and a nanophosphor 2 attached to surfaces of the inorganic particles 1.

The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.

The present invention relates to a composition comprising at least one nanosized light emitting material and at least compound represented by the following general formula (1) or (2), wherein Z is P, As or Sb and R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are, identically or differently, selected from alkyl groups, aryl groups, heteroaryl groups, aralkyl groups, heteroaralkyl groups, alkaryl groups and alkheteroaryl groups, ##STR00001##

The present invention relates to a composition comprising at least one nanosized light emitting material and at least compound represented by the following general formula (1) or (2), wherein Z is P, As or Sb and R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are, identically or differently, selected from alkyl groups, aryl groups, heteroaryl groups, aralkyl groups, heteroaralkyl groups, alkaryl groups and alkheteroaryl groups, ##STR00001##

The invention provides a method for growing bimodal-sized InAs/GaAs quantum dots, quantum dots, and a quantum dot composition. The method includes: S1. at a first temperature, depositing n atomic layers of InAs on a GaAs base grown with a GaAs buffer layer, where 1.4<n<1.7; S2. at a second temperature, performing annealing to form quantum dot nuclei, where the second temperature is lower than the first temperature; and S3. continuing to deposit 1.7-n atomic layers of InAs at the second temperature, where the quantum dot nuclei form first quantum dots, when a deposition amount reaches 1.7 atomic layers, second quantum dots are formed on the flat surface between the first quantum dots, and a size of the second quantum dot is smaller than a size of the first quantum dot.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.