Patent classifications
C09K11/74
POLARIZED LUMINESCENT FILM
To provide a polarized luminescent film obtained by applying, to a substrate material, a polymerizable composition including a rod-like luminescent nanocrystal and a polymerizable liquid crystal compound, and radiating an active energy ray, and to provide a film having good polarization characteristics. The present invention provides a polarized luminescent film and a polarized luminescent multilayered body formed from a polymerizable composition containing a rod-like luminescent nanocrystal and a polymerizable liquid crystal compound. The present invention also provides a backlight and a display device including a polarized luminescent multilayered body according to the present invention.
DENSE HIGH-SPEED SCINTILLATOR MATERIAL OF LOW AFTERGLOW
The invention relates to an inorganic scintillator material of formula Lu.sub.(2-y)Y.sub.(y-z-x)Ce.sub.xM.sub.zSi.sub.(1-v)M.sub.vO.sub.5, in which: M represents a divalent alkaline earth metal and M represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1.
In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.
DENSE HIGH-SPEED SCINTILLATOR MATERIAL OF LOW AFTERGLOW
The invention relates to an inorganic scintillator material of formula Lu.sub.(2-y)Y.sub.(y-z-x)Ce.sub.xM.sub.zSi.sub.(1-v)M.sub.vO.sub.5, in which: M represents a divalent alkaline earth metal and M represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1.
In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.
Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method
Disclosed herein is a method for preparing a multilayer of nanocrystals. The method comprises the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals.
Method of manufacturing semiconductor quantum dot and semiconductor quantum dot
There is provided a method of manufacturing a semiconductor quantum dot including the following steps (A1) and (B1): a step (A1) of causing a nanoparticle including a specific compound semiconductor and a salt of a specific metal a1 to react with each other to introduce the metal a1 into a surface layer of the nanoparticle; and a step (B1) of causing the nanoparticle in which the metal a1 is introduced into the surface layer and a salt of a specific metal b1 to react with each other to introduce the metal b1 into the surface layer of the nanoparticle. There is provided a semiconductor quantum dot having a structure in which a specific metal a1 and/or a specific metal b1 is introduced into a surface layer of a nanoparticle including a specific compound semiconductor.
Method of manufacturing semiconductor quantum dot and semiconductor quantum dot
There is provided a method of manufacturing a semiconductor quantum dot including the following steps (A1) and (B1): a step (A1) of causing a nanoparticle including a specific compound semiconductor and a salt of a specific metal a1 to react with each other to introduce the metal a1 into a surface layer of the nanoparticle; and a step (B1) of causing the nanoparticle in which the metal a1 is introduced into the surface layer and a salt of a specific metal b1 to react with each other to introduce the metal b1 into the surface layer of the nanoparticle. There is provided a semiconductor quantum dot having a structure in which a specific metal a1 and/or a specific metal b1 is introduced into a surface layer of a nanoparticle including a specific compound semiconductor.
LUMINESCENT NANOPARTICLES AND LUMINESCENT SOLAR CONCENTRATORS CONTAINING SAME
Disclosed herein are luminescent nanoparticles comprising In.sub.1-xZn.sub.xAs and In.sub.1-yZn.sub.yP, wherein x is from 0 to 0.5, y is from 0 to 0.6, and the molar ratio of In.sub.1-xZn.sub.xAs to In.sub.1-yZn.sub.yP is from 1:4 to 1:5000. In a preferred embodiment, the luminescent nanoparticles are InAsIn(Zn)PZnSeZn S quaternary giant-shell quantum dots that possess efficient photoluminescence in the near-infrared region with a large Stokes shift and minimal reabsorption. The core-shell nanoparticles may be particularly useful in the formation of a luminescent solar concentrator when used as part of a composite material formed from the nanoparticles and a suitable polymer. Also disclosed herein are methods to manufacture the nanoparticles, the composite materials and solar concentrators.
QUANTUM DOT STRUCTURE, MANUFACTURING METHOD THEREOF, AND QUANTUM DOT LIGHT-EMITTING DEVICE
The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.
Dense high-speed scintillator material of low afterglow
The invention relates to an inorganic scintillator material of formula Lu.sub.(2y)Y.sub.(yzx)Ce.sub.xM.sub.zSi.sub.(1v)M.sub.vO.sub.5, in which: M represents a divalent alkaline earth metal and M represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1. In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.
Luminescent hyperbolic metasurfaces
Techniques, systems, and devices are disclosed for implementing light-emitting hyperbolic metasurfaces. In one exemplary aspect, a light-emitting device includes a surface; a plurality of quantum heterostructures positioned on the surface, each of the plurality of quantum heterostructures including multiple quantum wells distributed along an axis perpendicular to the surface and separated by multiple quantum barriers, wherein each two adjacent quantum heterostructures of the plurality quantum heterostructures form a gap; and a monocrystalline material at least partially filling gaps between the plurality quantum heterostructures.