This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120 C. and 200 C.

This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120 C. and 200 C.

The present invention relates to a photoelectric conversion element material provided with a base material and a light-receiving layer including a semiconductor film formed on the base material. The semiconductor film that forms this light-receiving layer includes Ag.sub.2xBi.sub.xS.sub.x+1 (x is an integer of 0 or 1) and has a crystallite diameter of 10 nm or more and 40 nm or less. The light-receiving layer can be produced by applying an ink containing the semiconductor nanoparticles dispersed in a dispersion medium to a base material and then firing the ink at 200 C. or higher and 350 C. or lower. The photoelectric conversion element material of the present invention has an absorption property with respect to light with wavelengths in the near infrared region and excellent photoresponsivity.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

An indium-containing quantum dot including a compound represented by Chemical Formula 1:
In.sub.1-xM.sub.xA Chemical Formula 1 wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1, wherein the indium-containing quantum dot includes fluorine and oxygen to bonded to a surface of the indium-containing quantum dot, wherein an amount of the fluorine is greater than or equal to about 10 atomic percent based on a total number of indium atoms in the indium-containing quantum dot as determined by Rutherford backscattering analysis, and wherein an amount of the oxygen is about 5 atomic percent to about 50 atomic percent based on the total number of indium atoms included in the quantum dot as determined by Rutherford backscattering analysis.

Provided are core-shell particles that have high luminous efficiency and are useful as quantum dots, a method for producing the same, and a film produced using the core-shell particles. The core-shell particles of the invention are core-shell particles having a core containing a Group III element and a Group V element; and a shell covering at least a portion of the surface of the core and containing a Group II element and a Group VI element, in which the proportion of the peak intensity ratio of the Group II element with respect to the peak intensity ratio of the Group III element as measured by X-ray photoelectron spectroscopy analysis is 0.25 or higher.

A luminescent solar concentrator having a glass or plastics matrix containing or covered with perovskites having luminescence from intra-gap states is provided.

Methods and systems convert combustion products to electricity, by efficiently coupling between photovoltaic cells with photons. The photons are emitted from a burning process of a photoluminescence material, the burning process including the chemical reaction of combustion.

Quantum dot layers and display devices including quantum dot layers are described. In an embodiment the quantum dot layer includes quantum dots with coatings to adjust the spacing between adjacent quantum dots. In an embodiment, the coatings are metal oxide coatings and may create a charge transporting matrix. In an embodiment, the coatings are core-material coatings. The QD layers may be QD-LED compatible.

Light modules for converting the wavelength of light are described herein along with methods for using and making such modules and devices incorporating such modules.