Patent classifications
C09K11/88
POLYMER, QUANTUM DOT COMPOSITION AND LIGHT-EMITTING DEVICE EMPLOYING THE SAME
A polymer, a quantum dot composition, and a light-emitting device employing the same are provided. The polymer includes a first repeat unit that has a structure represented by Formula (I):
##STR00001##
wherein the definitions of R.sup.1, R.sup.2, A.sup.1, A.sup.2, A.sup.3, and Z.sup.1 and n are as defined in the specification.
QUANTUM DOT-DOPED GLASS
The present disclosure relates to a quantum dot-doped glass and method of making the same. A quantum dot-doped glass includes glass including quantum dots in an internal structure of the glass. The quantum dots within the glass have a photoluminescence quantum yield of greater than or equal to 10%.
Semiconductor nanocrystal particles and devices including the same
A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
Light-converting material with semiconductor nanoparticles, process for its preparation, and light source
The present invention relates to a light-converting material which comprises a luminescent material with semiconductor nanoparticles (quantum materials), where the semiconductor nanoparticles are located on the surface of the luminescent material and the emission from the semiconductor nanoparticles is in the region of the emission from the luminescent material. The present invention furthermore relates to a process for the preparation of the light-converting material and to the use thereof in a light source. The present invention furthermore relates to a light-converting mixture, a light source, a lighting unit which contains the light-converting material according to the invention, and a process for the production thereof.
Luminescent material and electronic device having a display function using the same
A luminescent material includes a particle of an irregular shape. The particle of an irregular shape includes a core of an irregular shape and quantum dots. The quantum dots distribute on the core.
Fabrication method of InP based quantum dot by using aminophosphine type P precursor and core size-sorting procedure
A method for fabricating quantum dots according to the present disclosure includes (a) synthesizing InP cores based on an aminophosphine type phosphorus (P) precursor, (b) size-sorting the InP cores, and (c) forming at least two shells on the size-sorted InP cores. In this instance, the size-sorting includes precipitating the InP cores with an addition of a dispersive solvent and a nondispersive solvent to the InP cores and separating the InP cores using a centrifugal separator, wherein the InP cores are separated in a descending order by size by performing iteration with a gradual increase in an amount of the nondispersive solvent.
Quantum dots, and an electronic device including the same
A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).
QUANTUM DOT FILM AND PREPARATION METHOD THEREOF, AND QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREOF
A method for preparing a quantum dot film, including: in the presence of an inert gas atmosphere, providing a mixed solution system comprising first quantum dots and a fatty acid solution of first ligands, and performing ligand exchange reaction under a first heating condition, to prepare second quantum dots having the first ligands having a structure of Formula 1 attached to surfaces thereof; and depositing the second quantum dots on a substrate to prepare a quantum dot prefabricated film, depositing a mixed solution containing an initiator and a cross-linker on the quantum dot prefabricated film, and heating to crosslink the first ligands on the surfaces of the second quantum dots; or alternatively, adding an initiator and a cross-linker to the second quantum dots, and depositing a resulting mixed system onto a substrate, heating to crosslink the first ligands on the surfaces of the second quantum dots.
Semiconducting light emitting nanoparticle
The present invention relates to semiconducting light emitting nanoparticles and compositions.
Semiconducting light emitting nanoparticle
The present invention relates to semiconducting light emitting nanoparticles and compositions.