An infrared up-conversion device for converting LWIR radiation to NIR radiation includes a distribution of core-shell nano-sized particles within a transparent binder material. The core-shell particles can be composed of a HgTe core and a CdTe shell. The up-conversion device can be used with a NIR imager to function as an LWIR imager without the need for cryogenic cooling.

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

A light sensitive device including a substrate and high pass filter semiconductor nanoparticles distributed on the substrate. The substrate includes at least one photosensor, and the semiconductor nanoparticles are high pass filters in UV-visible-NIR light range. The light sensitive device has a density of the semiconductor nanoparticles per surface unit of greater than 5×10.sup.9 nanoparticles.cm.sup.−2. Also, a process for the manufacture of the light sensitive device, and an image sensor that includes the light sensitive device.

A method of preparation of mercury chalcogenide nanoparticles that includes the steps of providing a precursor of mercury and mixing the precursor of mercury with a precursor of chalcogenide, wherein the precursor of mercury is a mercury thiolate. Also, mercury telluride nanoparticles and their use in an IR photodetector, an IR photoconversion device, an IR filter or an IR photodiode.

Many embodiments implement quantum confined nanoplatelets (NPLs) that can be induced to emit bright and tunable infrared emission from attached quantum dot (QD). Some embodiments provide mesoscale NPLs with a largest dimension of greater than 1 micron. Certain embodiments provide methods for growing mesoscale NPLs and QD on mesoscale NPLs heterostructures. Several embodiments provide near unity energy transfer from NPLs to QDs, which can quench NPL emission and emit with high quantum yield through the shortwave infrared. The QD defect emission can be kinetically tunable, enabling controlled mid-gap emission from NPLs.

The invention provides a lighting device (100) configured to provide lighting device light (101), the lighting device (100) comprising a solid state light source (10) configured to provide blue light (11) having a peak wavelength (λ.sub.PWL) selected from the range of 430-455 nm, a first luminescent material (210) configured to convert part of the blue light (11) into first luminescent material light (211) and a second luminescent material (220) configured to convert part of one or more of the blue light (11) and the first luminescent material light (211) into second luminescent material light (221), wherein the solid state light source (10), the first luminescent material (210), and the second luminescent material (220) are selected to provide at a first setting of the lighting device (100) white lighting device light (101) having a CRI of at least 90, a R.sub.9 value of at least 70, and a R.sub.50 value of at maximum 465 nm, wherein the R.sub.50 value is defined as a first wavelength (λ.sub.50) in a spectral distribution of the white lighting device light (101) at the first setting, wherein the first wavelength (λ.sub.50) is a wavelength closest to the peak wavelength (λ.sub.PWL) but at a longer wavelength than the peak wavelength (λ.sub.PWL) of the blue light (11) where the peak intensity (I.sub.50) is 50% of the intensity (I.sub.PWL) at the peak wavelength (λ.sub.PWL).

The invention provides a lighting device (100) configured to provide lighting device light (101), the lighting device (100) comprising a solid state light source (10) configured to provide blue light (11) having a peak wavelength (λ.sub.PWL) selected from the range of 430-455 nm, a first luminescent material (210) configured to convert part of the blue light (11) into first luminescent material light (211) and a second luminescent material (220) configured to convert part of one or more of the blue light (11) and the first luminescent material light (211) into second luminescent material light (221), wherein the solid state light source (10), the first luminescent material (210), and the second luminescent material (220) are selected to provide at a first setting of the lighting device (100) white lighting device light (101) having a CRI of at least 90, a R.sub.9 value of at least 70, and a R.sub.50 value of at maximum 465 nm, wherein the R.sub.50 value is defined as a first wavelength (λ.sub.50) in a spectral distribution of the white lighting device light (101) at the first setting, wherein the first wavelength (λ.sub.50) is a wavelength closest to the peak wavelength (λ.sub.PWL) but at a longer wavelength than the peak wavelength (λ.sub.PWL) of the blue light (11) where the peak intensity (I.sub.50) is 50% of the intensity (I.sub.PWL) at the peak wavelength (λ.sub.PWL).

The present disclosure relates to a manufacturing method of a quantum dot layer, a quantum dot color filter, a color filter substrate, a display panel, and a display device. The manufacturing method includes: performing lyophobic treatment on a first specified region of a first transparent layer, the first transparent layer including regions corresponding to a plurality of pixel regions, each pixel region of the plurality of pixel regions comprising a first subpixel region and a region other than the first subpixel region, the first specified region corresponding to the region other than the first subpixel region; and preparing a lyophilic first quantum dot solution on the first transparent layer to form a first quantum dot sublayer in a region that corresponds to the first subpixel region and is not subjected to the lyophobic.