This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.

This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.

A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, and a liquid medium, in which a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups.

A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

The present invention discloses an etchant and an etching method for a copper-molybdenum film layer. The etchant includes a main etchant, and the main etchant includes hydrogen peroxide, a chelating agent, a first inorganic acid, and water. A mass percentage of the chelating agent in the main etchant is in a range of 2% to 10%, a mass percentage of the first inorganic acid in the main etchant is in a range of 1% to 10%, and a mass percentage of the hydrogen peroxide in the main etchant is in a range of 4% to 10%.

The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to CMP, in which the cleaning liquid has an excellent selectivity for RuO.sub.2 removing performance; and a method for cleaning a semiconductor substrate that has been subjected to CMP. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a perhalogen acid and a halogen acid.

The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to CMP, in which the cleaning liquid has an excellent selectivity for RuO.sub.2 removing performance; and a method for cleaning a semiconductor substrate that has been subjected to CMP. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a perhalogen acid and a halogen acid.