The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.

The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.

The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

An inhibited hydrofluoric acid aqueous composition, said composition comprising: hydrofluoric acid in solution; and a weak base selected from the group consisting of: lysine, arginine, histidine, glutamine, asparagine, tryptophan, and tyrosine; wherein said weak base and hydrofluoric acid are present in a molar ratio of at least 1:1. Also disclosed is a mud acid using this inhibited acid composition.

An inhibited hydrofluoric acid aqueous composition, said composition comprising: hydrofluoric acid in solution; and a weak base selected from the group consisting of: lysine, arginine, histidine, glutamine, asparagine, tryptophan, and tyrosine; wherein said weak base and hydrofluoric acid are present in a molar ratio of at least 1:1. Also disclosed is a mud acid using this inhibited acid composition.

An etching solution for selectively performing an etching process on a compound represented by General Formula Si.sub.1-xGe.sub.x, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

An etching solution for selectively performing an etching process on a compound represented by General Formula Si.sub.1-xGe.sub.x, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.

The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.

The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.