A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which X.sub.1 is a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Y.sub.10 is one of —O—, —(C═O)—, —O—(C═O)—, and —(C═O)—O—, Y.sub.20 is one of —(C═O)—, —O—(C═O)—, and —(C═O)—O—, and Y.sub.11 and Y.sub.21 are each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X.sub.1, Y.sub.11, and Y.sub.21 do not contain hydroxyl groups in structures thereof, and when X.sub.1 is a single bond, Y.sub.10 is not —O—)

H.sub.3C—Y.sub.11—Y.sub.10—X.sub.1—Y.sub.20—Y.sub.21—CH.sub.3  (1).

Provided is a preparation method and use method of a material for deep purification of HF electronic gas. A metal fluoride-loaded activated carbon material AC/MFx.nH20 is prepared, and a mixed gas flow of carbonyl fluoride and high-purity nitrogen is used to deeply dehydrate the material to obtain the material for deep purification of HF electronic gas AC/MFx. This kind of material has fluoride that can form crystal water to form hydrated metal fluoride, and has strong water absorption properties. Moreover, the anhydrous fluoride and activated carbon do not have to face the problem of being corroded by HF, and the collapse of framework structure and the secondary pollution to HF from reaction products would not be caused. The material has the advantages of high purity and extremely low moisture content when being used for efficiently removing moisture in HF.

Provided is a preparation method and use method of a material for deep purification of HF electronic gas. A metal fluoride-loaded activated carbon material AC/MFx.nH20 is prepared, and a mixed gas flow of carbonyl fluoride and high-purity nitrogen is used to deeply dehydrate the material to obtain the material for deep purification of HF electronic gas AC/MFx. This kind of material has fluoride that can form crystal water to form hydrated metal fluoride, and has strong water absorption properties. Moreover, the anhydrous fluoride and activated carbon do not have to face the problem of being corroded by HF, and the collapse of framework structure and the secondary pollution to HF from reaction products would not be caused. The material has the advantages of high purity and extremely low moisture content when being used for efficiently removing moisture in HF.

Apparatus and method for treating a substrate, for example texturing a substrate. In some embodiments, a masking material is applied to a surface of the substrate in a predetermined pattern, the surface thereafter contacted with an etchant that removes the masking material. Contacting the surface with the etchant produces multiple co-located textures. In other embodiments, the masking step can be eliminated, and the etchant is applied in a predetermined pattern to produce multiple co-located textures. In still other embodiments, the substrate has a chemical composition, and the substrate is exposed to a leachant that leaches at least one constituent of the chemical composition to produce a substrate with a varying chemical composition at the substrate surface.

Apparatus and method for treating a substrate, for example texturing a substrate. In some embodiments, a masking material is applied to a surface of the substrate in a predetermined pattern, the surface thereafter contacted with an etchant that removes the masking material. Contacting the surface with the etchant produces multiple co-located textures. In other embodiments, the masking step can be eliminated, and the etchant is applied in a predetermined pattern to produce multiple co-located textures. In still other embodiments, the substrate has a chemical composition, and the substrate is exposed to a leachant that leaches at least one constituent of the chemical composition to produce a substrate with a varying chemical composition at the substrate surface.

A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.

According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.

According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.