Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.

A method for etching materials in which organic solvents are added to the etching mixture and combined in a mixing arrangement. When agitated organic materials mix with the etching agent and interact with the underlying material to form a shield around the etched areas that prevents the additional interaction of water with the newly etched areas and enables the etching of silicon oxides (SiOx) but does not oxidize Si. This method leads to milder reactions with less heat generation and avoids the safety hazards associated with conventional etching methods.

A method for etching materials in which organic solvents are added to the etching mixture and combined in a mixing arrangement. When agitated organic materials mix with the etching agent and interact with the underlying material to form a shield around the etched areas that prevents the additional interaction of water with the newly etched areas and enables the etching of silicon oxides (SiOx) but does not oxidize Si. This method leads to milder reactions with less heat generation and avoids the safety hazards associated with conventional etching methods.

An inhibited hydrofluoric acid aqueous composition, said composition comprising: hydrofluoric acid in solution; and a weak base selected from the group consisting of: lysine, arginine, histidine, glutamine, asparagine, tryptophan, and tyrosine; wherein said weak base and hydrofluoric acid are present in a molar ratio of at least 1:1. Also disclosed is a mud acid using this inhibited acid composition.

An inhibited hydrofluoric acid aqueous composition, said composition comprising: hydrofluoric acid in solution; and a weak base selected from the group consisting of: lysine, arginine, histidine, glutamine, asparagine, tryptophan, and tyrosine; wherein said weak base and hydrofluoric acid are present in a molar ratio of at least 1:1. Also disclosed is a mud acid using this inhibited acid composition.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

According to one embodiment, an etching method includes etching a surface made of a semiconductor and having a catalyst layer formed on the surface, by an etching agent in contact with the surface. The catalyst layer contains noble metal. The etching agent contains an oxidizer, a corrosive agent, and a N-containing polymer agent.

The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.

According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.

According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.