Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

Solutions suitable for etch cutting glass substrates are disclosed. The solutions can include: (a) about 20.1 to about 25 weight % of hydrofluoric acid; (b) about 7 to about 10.5 weight % of an organic carboxylic acid; (c) 0 to about 10 weight % of nitric acid; and (d) about 54.5 to about 72.9 weight % of water; wherein the weight % is based on the total weight of the etch cutting solution.

Solutions suitable for etch cutting glass substrates are disclosed. The solutions can include: (a) about 20.1 to about 25 weight % of hydrofluoric acid; (b) about 7 to about 10.5 weight % of an organic carboxylic acid; (c) 0 to about 10 weight % of nitric acid; and (d) about 54.5 to about 72.9 weight % of water; wherein the weight % is based on the total weight of the etch cutting solution.

Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.

In a method of manufacturing a semiconductor device having an oxide film removing step where an oxide film formed on a surface of a semiconductor substrate is partially removed, the oxide film removing step includes: a first step where a resist glass layer is selectively formed on an upper surface of the oxide film without using an exposure step; a second step where the resist glass layer is densified by baking the resist glass layer; and a third step where the oxide film is partially removed using the resist glass layer as a mask, wherein the resist glass layer is made of resist glass which contains at least SiO.sub.2, B.sub.2O.sub.3, Al.sub.2O.sub.3, and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na, K, and Zn.

In a method of manufacturing a semiconductor device having an oxide film removing step where an oxide film formed on a surface of a semiconductor substrate is partially removed, the oxide film removing step includes: a first step where a resist glass layer is selectively formed on an upper surface of the oxide film without using an exposure step; a second step where the resist glass layer is densified by baking the resist glass layer; and a third step where the oxide film is partially removed using the resist glass layer as a mask, wherein the resist glass layer is made of resist glass which contains at least SiO.sub.2, B.sub.2O.sub.3, Al.sub.2O.sub.3, and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na, K, and Zn.

The present disclosure relates to an etching solution capable of suppressing particle appearance including a first silane compound in which three or more hydrophilic functional groups are independently bonded to a silicon atom and a second silane compound in which one or two hydrophilic functional groups are independently bonded to a silicon atom. n

The present disclosure relates to an etching solution capable of suppressing particle appearance including a first silane compound in which three or more hydrophilic functional groups are independently bonded to a silicon atom and a second silane compound in which one or two hydrophilic functional groups are independently bonded to a silicon atom. n

There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.