There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.

The invention provides an aqueous solution capable of selectively protecting a nitrogen-containing silicon compound from corrosion by a treating solution for etching, cleaning or the like, etching oxygen-containing, carbon-containing silicon in particular, and making a large etch rate difference between a nitrogen-containing silicon compound and an oxygen-containing silicon compound, and a process for producing electronic parts as well. The invention is embodied by a treating solution for electronic parts that is an aqueous solution containing one or two or more of anionic surface active agents represented by the following formulae (1), (2) and (3), and a process for producing an electronic part. ##STR00001## wherein R.sub.1, R.sub.2, and R.sub.3 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X.sub.1 stands for a functional group capable of becoming an anionic ion. ##STR00002## wherein R.sub.4 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, X.sub.2 stands for a functional group capable of becoming an anionic ion, and n stands for a natural number of greater than 2. ##STR00003## wherein R.sub.5 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X.sub.3, and X.sub.4 stands for a functional group capable of becoming an anionic ion.

The invention provides an aqueous solution capable of selectively protecting a nitrogen-containing silicon compound from corrosion by a treating solution for etching, cleaning or the like, etching oxygen-containing, carbon-containing silicon in particular, and making a large etch rate difference between a nitrogen-containing silicon compound and an oxygen-containing silicon compound, and a process for producing electronic parts as well. The invention is embodied by a treating solution for electronic parts that is an aqueous solution containing one or two or more of anionic surface active agents represented by the following formulae (1), (2) and (3), and a process for producing an electronic part. ##STR00001## wherein R.sub.1, R.sub.2, and R.sub.3 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X.sub.1 stands for a functional group capable of becoming an anionic ion. ##STR00002## wherein R.sub.4 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, X.sub.2 stands for a functional group capable of becoming an anionic ion, and n stands for a natural number of greater than 2. ##STR00003## wherein R.sub.5 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X.sub.3, and X.sub.4 stands for a functional group capable of becoming an anionic ion.

Compositions including one or more fluorochemical surfactants of the formula: (I) where R.sub.f is a perfluoroalkyl group, each of R.sup.1, R.sup.2 and R.sup.3 are C.sub.1-C.sub.20 alkyl, alkoxy, or aryl; and R.sup.4 is alkylene, arylene of a combination thereof. R.sup.4 is preferably an alkylene of 1-20 carbons that may be cyclic or acyclic, may optionally contain catenated or terminal heteroatoms selected from the group consisting of N, O, and S. Most preferably R.sup.4 is an alkylene of 2-10 carbon atoms. Described are anionic N-substituted fluorinated amine oxide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.

##STR00001##

Compositions including one or more fluorochemical surfactants of the formula: (I) where R.sub.f is a perfluoroalkyl group, each of R.sup.1, R.sup.2 and R.sup.3 are C.sub.1-C.sub.20 alkyl, alkoxy, or aryl; and R.sup.4 is alkylene, arylene of a combination thereof. R.sup.4 is preferably an alkylene of 1-20 carbons that may be cyclic or acyclic, may optionally contain catenated or terminal heteroatoms selected from the group consisting of N, O, and S. Most preferably R.sup.4 is an alkylene of 2-10 carbon atoms. Described are anionic N-substituted fluorinated amine oxide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.

##STR00001##

The invention provides a resin-thin-film-forming composition employed in hydrofluoric acid etching, which composition contains a hydrogenated polybutadiene compound having a (meth)acrylic group and a radical polymerization initiator.

A non-phosphoric acid-based silicon nitride film etching composition includes 5 to 50 wt % of an organic acid-based chelating agent including an organic phosphonic acid group, a carboxylic acid group, or a combination thereof, based on a total weight of the etching composition. The etching composition for pressurization suppresses etching a silicon oxide film and selectively etches a silicon nitride film in a vertically laminated structure in which both the silicon nitride film and the silicon oxide film are exposed to a surface or the silicon nitride film and the silicon oxide film are alternately laminated.

A non-phosphoric acid-based silicon nitride film etching composition includes 5 to 50 wt % of an organic acid-based chelating agent including an organic phosphonic acid group, a carboxylic acid group, or a combination thereof, based on a total weight of the etching composition. The etching composition for pressurization suppresses etching a silicon oxide film and selectively etches a silicon nitride film in a vertically laminated structure in which both the silicon nitride film and the silicon oxide film are exposed to a surface or the silicon nitride film and the silicon oxide film are alternately laminated.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.

A process for controlling the heat generated during the manufacture an inhibited hydrofluoric acid aqueous composition comprising: hydrofluoric acid in solution; a weak base; and an alkanolamine;
said process comprising the steps of: providing a pre-determined amount of weak base; adding a pre-determined amount of said hydrofluoric acid to said weak base and obtaining a solution; adding said alkanolamine to the resulting solution of hydrofluoric acid and weak base; mixing until all components are dissolved;
wherein said alkanolamine and hydrofluoric acid are present in a molar ratio of at least 1:1.