Novel mixtures of sugar amides or sugar amines are disclosed that have improved thermal properties over the individual components. New feedstocks based on both the surfactant tail as well as the sugar head group allow for improved physical properties of sugar amide surfactant mixtures and thus improved formulatability. Furthermore, new sources of unique methyl esters from both bioengineering and or co-metathesis of fats and oils provide novel and improved sugar amide surfactant mixtures.

Novel mixtures of sugar amides or sugar amines are disclosed that have improved thermal properties over the individual components. New feedstocks based on both the surfactant tail as well as the sugar head group allow for improved physical properties of sugar amide surfactant mixtures and thus improved formulatability. Furthermore, new sources of unique methyl esters from both bioengineering and or co-metathesis of fats and oils provide novel and improved sugar amide surfactant mixtures.

Fatty acid based surfactants and methods for producing fatty acid based surfactants are described. The method includes reacting a fatty acid ester epoxide with a hydroxy acid, a hydroxy ester, a polyoxyalkyl diol, or a polyamine. Any remaining esters from the original fatty acid ester epoxide or hydroxy ester can optionally be hydrolyzed. Methods for making citric acid derived surfactants are also described.

Fatty acid based surfactants and methods for producing fatty acid based surfactants are described. The method includes reacting a fatty acid ester epoxide with a hydroxy acid, a hydroxy ester, a polyoxyalkyl diol, or a polyamine. Any remaining esters from the original fatty acid ester epoxide or hydroxy ester can optionally be hydrolyzed. Methods for making citric acid derived surfactants are also described.

The disclosure relates to floor stripping compositions, methods of making the floor stripping compositions, and methods of using the floor stripping compositions. In particular, the floor stripping compositions have a low surface tension. Preferably, the floor stripping compositions have low contact angles on a variety of surfaces. Most preferably, the floor stripping compositions are suitable for stripping acrylic floor finishes and acrylic polyurethane hybrid floor finishes.

A surfactant has a structure (I)-(VI) and may be used in an agrochemical composition that includes at least one surfactant of this disclosure and an agrochemical. The surfactant may be further defined as alkyl amine polyglycerol or alkyl polyamine polyglycerol, or alkyl polyglycerylamine. In another embodiment, the surfactant may be further defined as an amine oxide, as also described above. In another embodiment, the surfactant may be further defined as a quat or quaternary ammonium compound.

An agrochemical composition includes an agrochemical and a surfactant that has a structure (I)-(III). The surfactant may be further defined as an alkyl etheramine polyglycerol surfactant. In another embodiment, the surfactant may be further defined as an amine oxide, as also described above. In another embodiment, the surfactant may be further defined as a quat or quaternary ammonium compound.

There is provided a method of cleaning semiconductor substrates that is excellent in cleaning performance with respect to semiconductor substrates having undergone a chemical mechanical polishing process and corrosion prevention performance with respect to metal films. This method includes a cleaning step of cleaning a semiconductor substrate having undergone the CMP using a cleaning liquid. The cleaning liquid shows alkaline properties and contains: a component A that is at least one selected from the group consisting of a primary amine, a secondary amine, and a tertiary amine, provided that a compound represented by a specific formula (a) is excluded; and a component B that is a compound represented by the specific formula (a). The mass ratio of the component B content to the component A content is not more than 0.01. The cleaning liquid applied to the semiconductor substrate has a temperature of not lower than 30° C.

There is provided a method of cleaning semiconductor substrates that is excellent in cleaning performance with respect to semiconductor substrates having undergone a chemical mechanical polishing process and corrosion prevention performance with respect to metal films. This method includes a cleaning step of cleaning a semiconductor substrate having undergone the CMP using a cleaning liquid. The cleaning liquid shows alkaline properties and contains: a component A that is at least one selected from the group consisting of a primary amine, a secondary amine, and a tertiary amine, provided that a compound represented by a specific formula (a) is excluded; and a component B that is a compound represented by the specific formula (a). The mass ratio of the component B content to the component A content is not more than 0.01. The cleaning liquid applied to the semiconductor substrate has a temperature of not lower than 30° C.

Embodiments of the present methods and solutions that operate to prepare a metal surface to be ready for coating or primer. The surface is operated on using mechanical or pressure impingement operation in conjunction with application of medium comprising dimethylethanolamine (DMEA) and water (DMEA diluted in water). Embodiments of the present invention can perform the wash or decontamination to leave a clean surface that provides excellent performance in durability and rust resistance after being coated or primed. Other cleaning chemicals if added may reduce the performance and interfere with the desired objective. Other surfaces are contemplated.