A gas turbine engine system includes a compressor, gas turbine, and combustor including a plurality of late lean fuel injectors supplied with secondary fuel to its interior. The gas turbine engine system includes a wash system in communication with the late lean fuel injectors. The wash system includes a water source; water pump; anti-corrosion agent fluid source with an anti-corrosion agent including a amine corrosion inhibitor; anti-corrosion agent supply piping in fluid communication with the anti-corrosion agent fluid source; mixing chamber receiving water and anti-corrosion agent to produce an anti-corrosion mixture in fluid communication with the mixing chamber and the plurality of late lean fuel injectors. Fluid from the mixing chamber including the water, the anti-corrosion agent fluid source, or a mixture thereof is injected, while the gas turbine engine is off-line, into the combustor and at least one of the plurality of late lean fuel injectors.

Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.

An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.

Described herein is an automatic dishwashing (ADW) composition including as component (A) at least one imidazole-based compound selected from the group consisting of unsubstituted or at least monosubstituted imidazole and benzimidazole. The automatic dishwashing composition may include further components, such as polyakylene imines (component (B)), at least one silicate (component (C)) and/or at least one chelating agent (component (D)). Also described herein is a process for cleaning dishware using said ADW composition as well as a method of using said ADW composition, for example, to reduce any corrosion on the items to be dishwashed (dishware). Also described herein is a method of using at least one imidazole-based compound according to component (A) as a corrosion inhibitor in automatic dishwashing processes.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Described herein are compositions and methods for use in automotive care. In particular, the present disclosure is directed to water-based compositions comprising silicone combinations that delivery cleaning, protective, preservative and shine qualities.

A tile system for covering a surface. The tile system comprises a first tile assembly connected to a second tile assembly by a connector. Each tile assembly comprises a first tile stacked on a second tile, the first tile and the second tile joined to a reinforcing material disposed therebetween. The connector comprises a first component and a second component that is complementary to the first component. The first component is mounted to the first tile assembly, and the second component is mounted to the second tile assembly.

This disclosure relates to a cleaning composition that contains 1) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one monocarboxylic acid containing a primary or secondary amino group and at least one additional basic group containing nitrogen; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.