C11D3/0073

DISHWASHER DETERGENT CONTAINING METAL COMPLEXES

The present disclosure relates to an automatic dishwasher detergent which comprises metal complex of formula M.sup.n+L(Am.sup.m−).sub.n/m, wherein M is a metal cation, A is an arbitrary anion, n and m are integers selected from 1 to 6, and L is a neutral ligand of formula (II), wherein each X is as defined herein, and which exhibits improved cleaning performance in the removal of burnt-on soiling, to the use of this dishwasher detergent, and to a method for automatically washing dishes using this dishwasher detergent.

Compositions for cleaning III-V semiconductor materials and methods of using same

Liquid compositions useful for the cleaning of residue and contaminants from a III-V microelectronic device material, such as InGaAs, without substantially removing the III-V material. The liquid compositions are improvements of the SC1 and SC2 formulations.

PRESSED, SELF-SOLIDIFYING, SOLID CLEANING COMPOSITIONS AND METHODS OF MAKING THEM

The present invention relates to a method of making a solid cleaning composition. The method can include pressing and/or vibrating a flowable solid of a self-solidifying cleaning composition. For a self-solidifying cleaning composition, pressing and/or vibrating a flowable solid determines the shape and density of the solid but is not required for forming a solid. The method can employ a concrete block machine for pressing and/or vibrating. The present invention also relates to a solid cleaning composition made by the method and to solid cleaning compositions including particles bound together by a binding agent.

Wash Oil for Use as an Antifouling Agent in Gas Compressors

The present invention relates to wash oil for use as an antifouling agent in gas compressors, in particular in cracked gas compressors, including at least one compound according to formulae (II)

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with the moieties R.sup.2 and R.sup.3 are selected from a group of linear or branched C.sub.1-C.sub.20-alkyl, C.sub.3-C.sub.10-cycloalkyl and linear or branched C.sub.1-C.sub.10-alkyl substituted C.sub.3-C.sub.10-cycloalkyl and C.sub.6-C.sub.12 aryl and C.sub.1-C.sub.10-alkyl substituted C.sub.6-C.sub.12 aryl. The moieties can be interrupted by oxygen or nitrogen. The moieties can be functionalised with hydroxyl groups or amino groups. The moieties can be the same or different. The invention relates also to the use of such wash oil as anti-fouling agent.

Systems and methods for cleaning a cooling tower fill with a chemical gel
11247246 · 2022-02-15 ·

A process of using a chemical gel cleaning formulation to clean a cooling tower fill, comprising the steps of applying a pre-rinse fluid to the fill; applying the chemical gel cleaning formulation to the fill, wherein the chemical gel cleaning formulation includes glycerin, at least one polysaccharide, at least one corrosion inhibitor, at least one surfactant, and at least one acid; applying a descaling fluid to the fill; applying a neutralizer solution to the fill to neutralize the pH of residual fluid on the fill surface; and rinsing the fill with a rinsing fluid to remove residual chemical gel cleaning formulation and descaling fluid, residual neutralizer solution, and dissolved deposits from the fill.

Treatment liquid, method for washing substrate, and method for removing resist

A treatment liquid for a semiconductor device contains an organic alkali compound, a corrosion inhibitor, an organic solvent, Ca, Fe, and Na, in which each of the mass ratio of the Ca, the mass ratio of the Fe, and the mass ratio of the Na to the organic alkali compound in the treatment liquid is 10.sup.—12 to 10.sup.−4. A method for washing a substrate and a method for removing a resist use the treatment liquid.

Stripping compositions for removing photoresists from semiconductor substrates

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Alkaline cleaning compositions comprising an alkylamino hydroxy acid and/or secondary amine and methods of reducing metal corrosion

The invention relates to compositions, methods of manufacture, and methods for reducing metal corrosion during alkaline cleaning. In particular, the method employs an alkylamino hydroxy acid, secondary amine, or combination thereof in alkaline cleaning of hard surfaces.