A chemical solution used for cleaning or etching a ruthenium-containing layer, which can obtain the ruthenium-containing layer having a reduced surface roughness while maintaining a good etching rate against the ruthenium, and a method for fabricating ruthenium wiring. The chemical solution includes orthoperiodic acid, a base component, and any one of a nitrogen-containing heterocyclic compound, an organic phosphonic acid, and an organic carboxylic acid.

The present invention provides acidic or basic cleaning compositions for use in cleaning food and beverage industry processing equipment and pharmaceutical and cosmetic industry processing equipment wherein the compositions of the invention comprise a food-equipment-safe acidic or basic cleaning compound and a food-equipment-safe colorimetric indicator of pH to show the desired acid or basic conditions during storage prior to the start of a cleaning cycle and after storage and during a cleaning cycle. The cleaning compositions of the invention are particularly useful in, for example, CIP cleaning processes.

Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.

A polymer comprising a first fraction and a second fraction, wherein the first fraction comprises from 90 to 100 wt % polymerized C.sub.3-C.sub.6 carboxylic acid monomer units; and the second fraction comprises from 30 to 80 wt % polymerized C.sub.3-C.sub.6 carboxylic acid monomer units and from 20 to 70 wt % polymerized sulfonic acid monomer units; wherein the first fraction is from 10 to 40 wt % of the polymer and the second fraction is from 60 to 90 wt % of the polymer; the polymer has M.sub.w from 3,000 to 30,000; and monomers are randomly distributed within each fraction.

An automatic dishwashing cleaning composition and method of use is described. The automatic dishwashing cleaning composition can include a terpolymer including (meth)acrylic acid, linear or branched C1-C20 alkyl (meth)acrylate and vinylpyrrolidone; and a non-ionic surfactant.

Provided is a means capable of sufficiently removing organic residues on the surface of an object to be polished after polishing. A surface treatment composition includes a polymer having a building block represented by Formula (1) in [Chemical Formula 1], a chelating agent, and water and is used to treat the surface of an object to be polished after polishing, and the chelating agent has at least one of a phosphonic acid group and a carboxylic acid group.

##STR00001##

In Formula (1), R.sup.1 is a hydrocarbon group having 1 to 5 carbon atoms; and R.sup.2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

The present technology generally relates to liquid compositions for cleaning post-CMP semiconductor surfaces, and methods of cleaning a semiconductor surface having ceria (CeO.sub.2) particles thereon.

An automatic dishwashing composition is provided including a builder; a phosphonate; a nonionic surfactant; and a dispersant polymer, comprising: structural units of formula I

##STR00001##

wherein each R.sup.1 is independently selected from a hydrogen and a —C(O)CH.sub.3 group; and structural units of formula II

##STR00002##

wherein each R.sup.2 is independently selected from a hydrogen and a —CH.sub.3 group; and wherein the automatic dishwashing composition contains ≤0.1 wt % of dispersant polymer having a lactone end group and wherein the dispersant polymer has a weight average molecular weight of 1,500 to 10,000 Daltons.

Detergent compositions effective for controlling hard water scale accumulation are disclosed. Detergent compositions employing phosphinosuccinic acid and mono-, bis- and oligomeric phosphinosuccinic acid (PSO) derivatives with alkali metal carbonate and/or alkali metal hydroxide reduce had water scale accumulation on treated surfaces at alkaline conditions between about pH of 9 and 12.5. Methods employing the detergent compositions and preventing hard water scale accumulation are also provided.

A plastic cleaning method for cleaning a plastic article in an automatic dishwashing machine is provided, comprising: selecting an automatic dishwashing composition for cleaning plastic, wherein the automatic dishwashing composition, comprises: a builder; a phosphonate a nonionic surfactant; and a dispersant polymer comprising: (a) 60 to 98 wt % of structural units of formula I

##STR00001## wherein each R.sup.1 is independently selected from a hydrogen and a —CH.sub.3 group; and (b) 2 to 40 wt % of structural units of formula II

##STR00002## wherein each R.sup.2 is independently selected from an alkyl group with at least 4 carbon atoms and wherein each R.sup.3 is independently selected from a hydrogen and a methyl group.