An aerosolized HVAC/R system solvent for decontaminating HVAC/R components and line sets The solvent contains 25-90 wt % propellant, and 10-75 wt % solvent mixture which is about 60-95 wt % trans-1,2,dichloroethylene, about 5-20 wt % n-propanol, and an inerting constituent providing a weight percent ratio of the inerting constituent to n-propanol of less than 1.5. The solvent is packaged in a container that is connected to the HVAC/R components or line sets to be decontaminated for supplying the solvent mixture under pressure to the HVAC/R components or line sets.

A substrate treating method according to the present invention is a substrate treating method for treating a pattern-formed surface of a substrate W, the substrate treating method including: a supply process of supplying a substrate treating liquid containing a sublimable substance and a solvent to the pattern-formed surface; a solidification process of evaporating the solvent in a liquid film of the substrate treating liquid supplied to the pattern-formed surface in the supply process, depositing the sublimable substance, and forming a solidified film containing the sublimable substance; and a sublimation process of sublimating the solidified film and removing the solidified film, in which the sublimable substance contains at least one of 2,5-dimethyl-2,5-hexanediol and 3-trifluoromethylbenzoic acid.

A substrate treating method according to the present invention is a substrate treating method for treating a pattern-formed surface of a substrate W, the substrate treating method including: a supply process of supplying a substrate treating liquid containing a sublimable substance and a solvent to the pattern-formed surface; a solidification process of evaporating the solvent in a liquid film of the substrate treating liquid supplied to the pattern-formed surface in the supply process, depositing the sublimable substance, and forming a solidified film containing the sublimable substance; and a sublimation process of sublimating the solidified film and removing the solidified film, in which the sublimable substance contains at least one of 2,5-dimethyl-2,5-hexanediol and 3-trifluoromethylbenzoic acid.

A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.

A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.

A method of sanitizing a surface is described that includes: (a) providing a pH control composition that includes at least one pH control agent (such as sodium bisulfate); (b) contacting a first feed aqueous stream with the pH control composition, thereby forming a first treated aqueous stream; (c) combining at least a portion of the first treated aqueous stream with a feed sanitizing aqueous stream that includes free available halogen, thereby forming a treated sanitizing aqueous stream that includes free available halogen (such as free available chlorine). The surface sanitizing method further includes, (d) elevating the temperature of the treated sanitizing aqueous stream, thereby forming a heated treated sanitizing aqueous stream having an elevated temperature that includes free available halogen. The heated treated sanitizing aqueous stream is applied to a surface to be sanitized (such as a poultry carcass surface).

A method of sanitizing a surface is described that includes: (a) providing a pH control composition that includes at least one pH control agent (such as sodium bisulfate); (b) contacting a first feed aqueous stream with the pH control composition, thereby forming a first treated aqueous stream; (c) combining at least a portion of the first treated aqueous stream with a feed sanitizing aqueous stream that includes free available halogen, thereby forming a treated sanitizing aqueous stream that includes free available halogen (such as free available chlorine). The surface sanitizing method further includes, (d) elevating the temperature of the treated sanitizing aqueous stream, thereby forming a heated treated sanitizing aqueous stream having an elevated temperature that includes free available halogen. The heated treated sanitizing aqueous stream is applied to a surface to be sanitized (such as a poultry carcass surface).

One of the problems is to provide a solvent composition which has a little adverse effect on the global environment and has excellent stability when a compound having a perfluoropolyether (PFPE) group is in a solution state. In an embodiment, the problem is solved by providing a solvent composition for dissolving a compound having a perfluoropolyether (PFPE) group includes Z-1,2-dichloro-3,3,3-trifluoropropene (1223xd(Z)) as a main component.

A composition containing 1,2-dichloro-3,3,3-trifluoropropene (HCFO-1223xd) and a fluorine-based oil.

The present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device and a method for cleaning a substrate for a semiconductor device using the same. The cleaning agent composition contains a silicon-based compound represented by Formula 1 and an aprotic organic solvent with a dielectric constant of 10 or less, which can form a surface protective film capable of preventing collapse of the pattern even in a wet cleaning process of fine patterns with high aspect ratios, thereby providing a method for manufacturing a semiconductor device with an improved semiconductor manufacturing yield.