The present invention provides a composition having an excellent dissolving ability for a transition metal-containing substance and a method for treating a substrate. The composition according to an embodiment of the present invention contains at least one oxohalogen acid compound selected from the group consisting of hypochlorous acid, chlorous acid, chloric acid, bromic acid, and salts thereof and a compound represented by Formula (1), in which a content of the compound represented by Formula (1) is 1.0% to 25.0% by mass with respect to a total mass of the composition.

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The present disclosure relates to high alkaline cleaners, cleaning systems and methods for removing polymerized zero trans fat soils. The high alkaline cleaner of the present invention generally includes one or more alkaline wetting and saponifying agent(s), a chelating/sequestering system and a surface modifying-threshold agent system. In various embodiments, the cleaners may include, at least one cleaning agent comprising a surfactant or surfactant system and/or a solvent or solvent system and/or a cleaning booster such as a peroxide or sulfite type additive. The cleaners may also include one or more components to modify the composition form and/or the application method in some embodiments. All components described above may also be optimized optionally, to provide emulsification of a composition (both as a usable product or a concentrate that can be diluted to form a usable product). The use of the high alkaline cleaner of the present invention has demonstrated enhanced cleaning characteristics especially at higher temperatures (100° F. to about 200° F.) but also shows enhanced cleaning at ambient temperatures.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

A cleaning liquid composition is provided. More particularly, a cleaning liquid composition includes a transition metal compound represented by Chemical Formula 1 (see the detailed description of the present invention); and a hydrocarbon-based solvent, and a cleaning method of a polymerization apparatus using the same.

A method and composition for removing contaminant material from industrial equipment are disclosed herein. The method includes providing a solvent composition having methyl soyate, N-methylpyrrolidinone, an additional solvent, and a cationic surfactant. The method also includes contacting the contaminant material with the solvent composition and allowing the solvent composition to react with the contaminant material such that at least a portion of the contaminant material is no longer attached to the industrial equipment.

Methods of cleaning waxy, oily and/or greasy soils, including lipsticks and lip gloss, are disclosed. Methods of removing lipstick and lip gloss stains in warewash and laundry applications are disclosed through application of cleaning compositions comprising long chain polyamines, namely C6-C20 polyamines having between 1 and 5 nitrogens.

A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.

Provided is a method for producing a decomposing/cleaning composition which improves etching speed retention. A method for producing a decomposing/cleaning composition which contains (A) an N-substituted amide compound in which a hydrogen atom is not directly bonded to a nitrogen atom and (B) a quaternary alkyl ammonium fluoride or a hydrate thereof, said method having a preparation step for mixing the (A) and (B) components in an inert gas atmosphere.

The present invention is to provide a method for producing a laminate having excellent adhesion properties. An embodiment of the present invention is a method for producing a laminate, the method including: a step 1 of dry-treating a surface A of a plastic to obtain a dry-treated plastic having a surface B that has been dry-treated; a step 2 of wiping the surface B with a cleaning tool containing a composition for wiping, the composition containing at least one solvent selected from the group consisting of water and polar solvents, and a silane coupling agent, to obtain a cleaned plastic having a surface C that has been wiped with the cleaning tool; and a step 3 of applying at least one selected from the group consisting of adhesives and primers on the surface C to obtain a laminated body.