An object of the present invention is to provide a chemical liquid purification method by which a chemical liquid capable of inhibiting the occurrence of short in a semiconductor substrate manufactured by a photolithography process is obtained. Another object of the present invention is to provide a chemical liquid manufacturing method and a chemical liquid. The chemical liquid purification method of the present invention includes a purification step of filtering a liquid to be purified by using a filter, in which a filter satisfying a condition 1 or a condition 2 in the following test is used as the filter. Test: 1,500 ml of a test liquid formed of the organic solvent is brought into contact with the filter for 24 hours under a condition of 23° C., and a content of particles containing at least one kind of metal selected from the group consisting of Fe, Al, Cr, Ni, and Ti in the test liquid after the contact satisfies a predetermined condition.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in cleaning performance and corrosion prevention performance with respect to copper-containing and cobalt-containing metal films. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone CMP. A cleaning liquid of the invention is for semiconductor substrates having undergone CMP and includes: a component A that is an amino acid having one carboxyl group; a component B that is at least one selected from the group consisting of an aminopolycarboxylic acid and a polyphosphonic acid; and a component C that is an aliphatic amine (provided that the component A, the aminopolycarboxilic acid and a quaternary ammonium compound are excluded). The mass ratio of the component B content to the component A content is 0.2 to 10, and the mass ratio of the component C content to the sum of the component A content and the component B content is 5 to 100.

The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

##STR00001##

A method for selective etching Si in the presence of silicon nitride and an etching composition with high Si/Si3N4 etching selectivity are disclosed. Particularly, the method for selective etching Si in the presence of silicon nitride is to apply the etching composition with high Si/Si3N4 etching selectivity in the etching process, and the etching composition with high Si/Si3N4 etching selectivity comprises about 0.5 wt. % to about 10 wt. % of at least one quaternary ammonium compound, about 5 wt. % to about 55 wt. % of at least one primary amine, about 15 wt. % to about 80 wt. % of at least one polyol, and about 10 wt. % to about 35 wt. % water based on total weight of the etching composition.

A cleaning composition comprising: a. At least one alkanolamine b. At least one mineral acid c. At least one salt of a hydroxycarboxylic acid d. At least one protease enzyme; wherein said composition contains no surfactant.