A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.

A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.

The present invention relates to a chemical composition that removes accumulated impurities from a DPF in an easy and fast manner. The filter does not need to be removed from the vehicle, as cleaning is done by injecting the liquid through the temperature probe opening, and the chemical composition used is completely biodegradable. Cleaning with the chemical composition of the invention is not time consuming, is easy to perform and, results in completely purified DPF. Presented chemical composition for cleaning DPFs comprises alkyl sulfonic acid and distilled water, wherein the alkyl sulfonic acid is a short alkyl chain sulfonic acid with up to 4 carbon atoms (methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid or butane sulfonic acid), with methane sulfonic acid being preferred due to its properties and availability.

The present invention relates to a chemical composition that removes accumulated impurities from a DPF in an easy and fast manner. The filter does not need to be removed from the vehicle, as cleaning is done by injecting the liquid through the temperature probe opening, and the chemical composition used is completely biodegradable. Cleaning with the chemical composition of the invention is not time consuming, is easy to perform and, results in completely purified DPF. Presented chemical composition for cleaning DPFs comprises alkyl sulfonic acid and distilled water, wherein the alkyl sulfonic acid is a short alkyl chain sulfonic acid with up to 4 carbon atoms (methane sulfonic acid, ethane sulfonic acid, propane sulfonic acid or butane sulfonic acid), with methane sulfonic acid being preferred due to its properties and availability.

An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a chemical mechanical polishing method and a method for treating a semiconductor substrate.

The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor substrate, which includes a component A having two or more onium structures in the molecule and water, and has a pH of 6.0 to 13.5 at 25° C.

A semiconductor cleaning agent containing a sulfonic acid group-containing polymer, wherein a content of at least one metal selected from the group consisting of Na, Al, K, Ca and Fe is 0.7 ppm or less.

A semiconductor cleaning agent containing a sulfonic acid group-containing polymer, wherein a content of at least one metal selected from the group consisting of Na, Al, K, Ca and Fe is 0.7 ppm or less.

A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

A method of cleaning (e.g., selectively removing an oxide from) a surface of a substrate is disclosed. An exemplary method includes providing one or more of a haloalkylamine and a halogenated sulfur compound to a reaction chamber to selectively remove the silicon oxide from the surface.