A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom

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A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom

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Methods of dishwashing to remove soils are disclosed, including a first detergent wash step, wherein the detergent is substantially-free of water conditioning agents including polycarboxylic acid polymers and phosphonates, followed by a second step of rinsing under high temperature with a water conditioning agent, namely polycarboxylic acid polymers. The methods result in little to no precipitation forming on the treated ware due to the treating of the hard water before it contacts the alkalinity source which prevents precipitation and/or flocculation from occurring.

Methods of dishwashing to remove soils are disclosed, including a first detergent wash step, wherein the detergent is substantially-free of water conditioning agents including polycarboxylic acid polymers and phosphonates, followed by a second step of rinsing under high temperature with a water conditioning agent, namely polycarboxylic acid polymers. The methods result in little to no precipitation forming on the treated ware due to the treating of the hard water before it contacts the alkalinity source which prevents precipitation and/or flocculation from occurring.

Caustic-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, non-caustic source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces and enhance protein removal from the treated surfaces. Beneficially the detergent compositions have a concentrate pH less than about 11.5. The detergent compositions are used with a sanitizer to employ the low alkaline detergent compositions are particularly suitable for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the low alkaline detergent compositions are also provided.

Caustic-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, non-caustic source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces and enhance protein removal from the treated surfaces. Beneficially the detergent compositions have a concentrate pH less than about 11.5. The detergent compositions are used with a sanitizer to employ the low alkaline detergent compositions are particularly suitable for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the low alkaline detergent compositions are also provided.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.