C11D7/36

CLEANING SOLUTION AND CLEANING METHOD

There is provided a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in storage stability. In addition, there is provided a method of cleaning semiconductor substrates having undergone CMP. The cleaning liquid for semiconductor substrates having undergone CMP shows alkaline properties and contains: an amine compound that is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, and their salts; a chelating agent; and water. The amine compound content is not less than 25.5 mass % and less than 90 mass % based on the total mass of the cleaning liquid, and the water content is 10 to 60 mass % based on the total mass of the cleaning liquid.

Aqueous composition and cleaning method using same

An aqueous composition may include: (A) a fluoride ion supply source in an amount that gives a fluoride ion concentration of 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations of 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of one or more compounds selected from a C.sub.4-13 alkylphosphonic acid, a C.sub.4-13 alkylphosphonate ester, a C.sub.4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the composition, wherein pH is in a range of from 2 to 6.

Aqueous composition and cleaning method using same

An aqueous composition may include: (A) a fluoride ion supply source in an amount that gives a fluoride ion concentration of 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations of 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of one or more compounds selected from a C.sub.4-13 alkylphosphonic acid, a C.sub.4-13 alkylphosphonate ester, a C.sub.4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the composition, wherein pH is in a range of from 2 to 6.

Stable percarboxylic acid compositions and uses thereof

The present invention relates generally to stable percarboxylic acid compositions comprising, inter alia, at least two stabilizing agents, and various uses for water treatments, including water treatments in connection with oil- and gas-field operations. The present invention also relates to slick water compositions and gel based compositions that comprise stable percarboxylic acid compositions and the use thereof in oil- and gas-field operations.

Stable percarboxylic acid compositions and uses thereof

The present invention relates generally to stable percarboxylic acid compositions comprising, inter alia, at least two stabilizing agents, and various uses for water treatments, including water treatments in connection with oil- and gas-field operations. The present invention also relates to slick water compositions and gel based compositions that comprise stable percarboxylic acid compositions and the use thereof in oil- and gas-field operations.

Composition for surface treatment, method for producing composition for surface treatment, surface treatment method, and method for producing semiconductor substrate

A composition for surface treatment according to the present invention is used for treating the surface of an object to be polished after polishing, the composition for surface treatment including: a water-soluble polymer having a constituent unit derived from glycerin; an acid; and water, wherein the composition for surface treatment has a pH of 5 or lower.

COMPOSITION AND SUBSTRATE WASHING METHOD
20230365902 · 2023-11-16 · ·

The present invention provides a composition for a semiconductor device, which is excellent in residue removability. In addition, the present invention provides a substrate washing method using the treatment liquid. The composition for a semiconductor device contains alcohol, an aprotic polar solvent, an azole compound, an alkanolamine, and water.

COMPOSITION AND SUBSTRATE WASHING METHOD
20230365902 · 2023-11-16 · ·

The present invention provides a composition for a semiconductor device, which is excellent in residue removability. In addition, the present invention provides a substrate washing method using the treatment liquid. The composition for a semiconductor device contains alcohol, an aprotic polar solvent, an azole compound, an alkanolamine, and water.

Contact lens treatment solution

The present invention is a contact lens treatment solution containing the following copolymer A and copolymer B in a ratio of A/B=40/1 to 5/1 (by weight). According to the present invention, there can be provided a contact lens treatment solution capable of removing dirt having adhered to contact lens surfaces, capable of improving lubricity of contact lens surfaces and capable of imparting persisting hydrophilicity to contact lens surfaces, by simple immersion treatment. Copolymer A: a copolymer obtained by copolymerization of a monomer (a) represented by formula (1) and a monomer (b) represented by formula (2), in which the copolymerization ratio of the monomer (a) to the monomer (b), a/b=7/3 to 9/1 (by mol), and having a weight-average molecular weight of 400,000 to 800,000.
Copolymer B: a copolymer obtained by copolymerization of a monomer (a) represented by the formula (1) and a monomer (b) represented by the formula (2), in which the copolymerization ratio of the monomer (a) to the monomer (b), a/b=2/1 to 8/1 (by mol), and having a weight-average molecular weight of 1,000,000 to 1,500,000.

Contact lens treatment solution

The present invention is a contact lens treatment solution containing the following copolymer A and copolymer B in a ratio of A/B=40/1 to 5/1 (by weight). According to the present invention, there can be provided a contact lens treatment solution capable of removing dirt having adhered to contact lens surfaces, capable of improving lubricity of contact lens surfaces and capable of imparting persisting hydrophilicity to contact lens surfaces, by simple immersion treatment. Copolymer A: a copolymer obtained by copolymerization of a monomer (a) represented by formula (1) and a monomer (b) represented by formula (2), in which the copolymerization ratio of the monomer (a) to the monomer (b), a/b=7/3 to 9/1 (by mol), and having a weight-average molecular weight of 400,000 to 800,000.
Copolymer B: a copolymer obtained by copolymerization of a monomer (a) represented by the formula (1) and a monomer (b) represented by the formula (2), in which the copolymerization ratio of the monomer (a) to the monomer (b), a/b=2/1 to 8/1 (by mol), and having a weight-average molecular weight of 1,000,000 to 1,500,000.