A composition for cleaning a microelectronic device substrate is provided. The composition is useful for cleaning in-process microelectronic device substrates possessing exposed cobalt, molybdenum, copper, molybdenum, tungsten, and dielectric surfaces. Also provided is a method for cleaning such devices and a kit comprising one or more of the components of the composition.

An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.

An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.

A method of washing a positive electrode active material includes (1) preparing a lithium composite transition metal oxide which contains Ni, Co and Mn, and has the Ni content of 60 mol % or more; (2) putting the lithium composite transition metal oxide into water; and (3) adding a weak acid to water to which the lithium composite transition metal oxide is added to adjust the pH to 7 to 10, wherein the acid is a weak acid.

An object of the present invention is to provide a chemical liquid and a chemical liquid storage body having excellent performance of inhibiting metal impurity-containing defects. The chemical liquid according to an embodiment of the present invention contains an organic solvent, organic impurities, and metal impurities, in which the organic impurities contain a phosphoric acid ester and an adipic acid ester, and a mass ratio of a content of the phosphoric acid ester to a content of the adipic acid ester is equal to or higher than 1.

An object of the present invention is to provide a chemical liquid and a chemical liquid storage body having excellent performance of inhibiting metal impurity-containing defects. The chemical liquid according to an embodiment of the present invention contains an organic solvent, organic impurities, and metal impurities, in which the organic impurities contain a phosphoric acid ester and an adipic acid ester, and a mass ratio of a content of the phosphoric acid ester to a content of the adipic acid ester is equal to or higher than 1.

A method for cleaning and coating a tip of a test probe in an integrated circuit package test system is provided. The method includes 1) saturating a brush tip comprising nonporous bristles with a solution of phosphonic acid; 2) applying the solution of phosphonic acid to the tip of the test probe with the brush tip to coat the tip of the test probe with the solution of phosphonic acid; and 3) allowing the solution of phosphonic acid to dry on the tip of the test probe and form a self-assembled monolayer of phosphonates thereon.

A method is used for cleaning heat exchanger systems. The method is performed at a computer system having one or more processors and memory storing one or more programs configured for execution by the one or more processors. The method determines component percentages of a cleaning solution based, at least in part, on operational parameters of a heat exchanger system. The operational parameters include chemical composition of fluids passing through the heat exchanger system and operating temperatures of the fluids passing through the heat exchanger system. The component percentages of the cleaning solution include: (1) hydrogen peroxide, 2-90 wt. %; (2) a complexing agent, 3-30 wt. %; (3) water-soluble calixarene, 0.01-10 wt. %; and (4) water. The complexing agent includes a polybasic organic acid or a sodium salt thereof, or a derivative of phosphorous acid.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.