Disclosed are an anhydrous substrate cleaning composition, a substrate treating method, and a substrate treating apparatus. The anhydrous substrate cleaning composition includes an etching composite that provides fluorine, a solvent that dissolves the etching composite, and a binder that is a composite including phosphorous.

A concentrate aqueous composition for removing Type I and Type III rouge from various stainless-steel items. The liquid composition comprises oxalic acid, a phosphonic acid, and various amines. The use of an amine has been found to provide synergistic results in removal of the noted types of corrosion from various stainless-steel items that include medical instruments, machines, equipment, pipes, tools, mixing and storage vessels, and the like.

A concentrate aqueous composition for removing Type I and Type III rouge from various stainless-steel items. The liquid composition comprises oxalic acid, a phosphonic acid, and various amines. The use of an amine has been found to provide synergistic results in removal of the noted types of corrosion from various stainless-steel items that include medical instruments, machines, equipment, pipes, tools, mixing and storage vessels, and the like.

Methods of dishwashing to remove soils are disclosed, including a first detergent wash step, wherein the detergent is substantially-free of water conditioning agents including polycarboxylic acid polymers and phosphonates, followed by a second step of rinsing under high temperature with a water conditioning agent, namely polycarboxylic acid polymers. The methods result in little to no precipitation forming on the treated ware due to the treating of the hard water before it contacts the alkalinity source which prevents precipitation and/or flocculation from occurring.

Methods of dishwashing to remove soils are disclosed, including a first detergent wash step, wherein the detergent is substantially-free of water conditioning agents including polycarboxylic acid polymers and phosphonates, followed by a second step of rinsing under high temperature with a water conditioning agent, namely polycarboxylic acid polymers. The methods result in little to no precipitation forming on the treated ware due to the treating of the hard water before it contacts the alkalinity source which prevents precipitation and/or flocculation from occurring.

Aqueous formulations comprising (A) at least one organic complexing agent selected from (A1) alkali metal salts of aminopolycarboxylic acids and (A2) polymers bearing at least two CH.sub.2N(CH.sub.2COOH)-units per molecule, partially or fully neutralized with alkali, (B) at least one salt of at least one of the following acids: nitric acid, sulphuric acid, sulphamic acid, methanesulfonic acid, C.sub.1-C.sub.2-carboxylic acids, C.sub.2-C.sub.4-hydroxymonocarboxylic acids, C.sub.2-C.sub.7-dicarboxylic acids, unsubstituted or substituted with hydroxyl, and C.sub.4-C.sub.6-tricarboxylic acids, each unsubstituted or substituted with hydroxyl, (C) at least one compound selected from (C1) phosphoric acid C.sub.2-C.sub.10-monoalkyl esters, (C2) a C.sub.3-C.sub.10-alkynol, optionally alkoxylated with one to 10 alkoxide groups per hydroxyl group, and (C3) a C.sub.4-C.sub.10-alkynediol, optionally alkoxylated with one to 10 alkoxide groups per hydroxyl group, said aqueous formulations having pH values in the range of from 7.5 to 10.

Aqueous formulations comprising (A) at least one organic complexing agent selected from (A1) alkali metal salts of aminopolycarboxylic acids and (A2) polymers bearing at least two CH.sub.2N(CH.sub.2COOH)-units per molecule, partially or fully neutralized with alkali, (B) at least one salt of at least one of the following acids: nitric acid, sulphuric acid, sulphamic acid, methanesulfonic acid, C.sub.1-C.sub.2-carboxylic acids, C.sub.2-C.sub.4-hydroxymonocarboxylic acids, C.sub.2-C.sub.7-dicarboxylic acids, unsubstituted or substituted with hydroxyl, and C.sub.4-C.sub.6-tricarboxylic acids, each unsubstituted or substituted with hydroxyl, (C) at least one compound selected from (C1) phosphoric acid C.sub.2-C.sub.10-monoalkyl esters, (C2) a C.sub.3-C.sub.10-alkynol, optionally alkoxylated with one to 10 alkoxide groups per hydroxyl group, and (C3) a C.sub.4-C.sub.10-alkynediol, optionally alkoxylated with one to 10 alkoxide groups per hydroxyl group, said aqueous formulations having pH values in the range of from 7.5 to 10.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid. The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

The present invention relates to a composition for surface treatment including: a phosphonic acid compound containing two or more nitrogen atoms; and water, wherein the pH is 6 or less, and the composition for surface treatment is used for treating a surface of a polishing-completed object to be polished having a tungsten-containing layer. According to the present invention, there is provided a means capable of inhibiting dissolution of the tungsten-containing layer provided on a polishing-completed object to be polished when a surface treatment is performed.