A method for producing a semiconductor structure comprises: a) providing a working layer of a semiconductor material; b) providing a carrier substrate of a semiconductor material; c) depositing a thin film of a semiconductor material different from that or those of the working layer and the carrier substrate on a free face to be joined of the working layer and/or the carrier substrate; d) directly joining the free faces of the working layer and the carrier substrate, e) annealing the joined structure at an elevated temperature to bring about segmentation of the encapsulated thin film and form a semiconductor structure comprising an interface region between the working layer and the carrier substrate, the interface region comprising: regions of direct contact between the working layer and the carrier substrate; and agglomerates comprising the semiconductor material of the thin film adjacent the regions of direct contact.

A method for manufacturing a group III nitride semiconductor substrate, that includes: growing a first AlN buffer layer on an Si substrate at a first growth temperature; growing a second AlN buffer layer on the first AlN buffer layer at a second growth temperature higher than the first growth temperature; and growing a group III nitride semiconductor layer on the second AlN buffer layer, wherein an Al raw material and an N raw material are alternately repeatedly fed in the growing the first AlN buffer layer.

A method for making a semiconductor device may include forming a superlattice gettering layer on a substrate. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include forming a memory device above the superlattice gettering layer including a metal induced crystallization (MIC) channel adjacent the semiconductor substrate, and a gate associated with the MIC channel. The superlattice gettering layer may further include gettered metal particles from the MIC channel.