Patent classifications
H
H10
H10P
14/00
H10P14/3824
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING AN ENRICHED SILICON 28 EPITAXIAL LAYER
A method for making a semiconductor device may include growing .sup.28Si on a semiconductor layer, intermixing the .sup.28Si in the semiconductor layer, and thinning the semiconductor layer after intermixing. The method may further include repeating growing, intermixing, and thinning until a concentration of .sup.28Si in the semiconductor layer reaches a target concentration.