A 3D semiconductor device including: a first level including a first single crystal layer and first transistors, which each include a single crystal channel; a first metal layer with an overlaying second metal layer; a second level including second transistors, overlaying the first level; a third level including third transistors, overlaying the second level; a fourth level including fourth transistors, overlaying the third level, where the second level includes first memory cells, where each of the first memory cells includes at least one of the second transistors, where the fourth level includes second memory cells, where each of the second memory cells includes at least one of the fourth transistors, where the first level includes memory control circuits, where second memory cells include at least four memory arrays, each of the four memory arrays are independently controlled, and at least one of the second transistors includes a metal gate.

The present disclosure relates to compositions comprising gymnemic acid, together with a form of zinc to block the unpleasant bitter taste of gymnemic acid as well as to extend the sweet taste blocking properties of gymnemic acid, resulting in palatable compositions for delivery to the oral cavity to block sweet taste receptors located therein. The present disclosure also relates to methods of reducing sugar consumption and reducing calorie intake via administration of such compositions to a subject.

The present disclosure relates to compositions comprising gymnemic acid, together with a form of zinc to block the unpleasant bitter taste of gymnemic acid as well as to extend the sweet taste blocking properties of gymnemic acid, resulting in palatable compositions for delivery to the oral cavity to block sweet taste receptors located therein. The present disclosure also relates to methods of reducing sugar consumption and reducing calorie intake via administration of such compositions to a subject.