A 3D semiconductor device including: a first level including a first single crystal layer and first transistors, which each include a single crystal channel; a first metal layer with an overlaying second metal layer; a second level including second transistors, overlaying the first level; a third level including third transistors, overlaying the second level; a fourth level including fourth transistors, overlaying the third level, where the second level includes first memory cells, where each of the first memory cells includes at least one of the second transistors, where the fourth level includes second memory cells, where each of the second memory cells includes at least one of the fourth transistors, where the first level includes memory control circuits, where second memory cells include at least four memory arrays, each of the four memory arrays are independently controlled, and at least one of the second transistors includes a metal gate.

The present invention relates to a method for producing a powdered porous product from at least one starting powdery and/or viscous product, characterised in that it comprises the continuous following steps without exposing the product to open air: a) preparing the starting product in order to make it viscous; b) in a thermo-mechanical machine (10) for continuously realising transport and/or mixing functions of viscous products or dry-material rich products, lowering the viscosity of the viscous product without changing its dry-material content, by intimate mixing with a gas injected into the processing machine (10) and simultaneously initiating the porosity in the viscous product; c) continuously with the processing machine (10), statically or dynamically intensifying the intimate mixture of the viscous product with a gas in order to obtain an aerated and porous mass; and d), dividing said mass in order to obtain aerated and porous particles.