A light-emitting module includes a first terminal, a second terminal, a first light source, a second light source, and a third light source. The first light source is connected between the first terminal and the second terminal. The second light source and the third light source are connected between the first terminal and the second terminal, in anti-parallel with the first light source. The first, second, and third light sources are aligned in a first direction along a light-emitting surface, with the first light source between the second light source and the third light source.

This semiconductor light emitting device includes an emission layer, a passivation layer on the emission layer, and a first adhesive layer on the passivation layer. The passivation layer may include a plurality of grooves, and the first adhesive layer may be disposed in each of the plurality of grooves. Arranging the first adhesive layer in the plurality of grooves may enhance fixability. The display device includes a plurality of semiconductor light emitting devices. The semiconductor light emitting devices may include a horizontal semiconductor light emitting device, a flip chip semiconductor light emitting device, or a vertical semiconductor light emitting device.

A wiring substrate, a manufacturing method thereof, a light-emitting panel, and a display device are disclosed. The wiring substrate includes: a base substrate (11); and a plurality of metal traces (50) and an organic insulating layer (13), which are located at one side of the base substrate. The metal traces (50) each comprise a first metal layer (141) and a second metal layer (151), which are stacked; the first metal layer (141) is located between the second metal layer (151) and the base substrate (11); an angle between a side wall of the second metal layer (151) and the base substrate (11) is greater than or equal to 90; the area of a contact face between each of the metal traces (50) and the base substrate (11) is greater than or equal to the area of the surface of the second metal layer (151) opposite the first metal layer (141).

Light-emitting diode (LED) packages and more particularly a light collector for light mixing in LED packages to improve the far field emission pattern (FFP) of the LED packages are disclosed. The LED package can include one or more LED chips with different wavelength ranges, and the light collector placed over the LED chips can have a reflective surface, save for a reduced aperture through which the light from the LED chips can be emitted after mixing in the light collector. The LED package can also include a lens to further improve the FFP. In an embodiment, the light collector can include diffuser material to facilitate the mixing of the light within the light collector. The LED package with the light collector mixes multiple emission point sources into a single point source, or reduced-area source, that considerably improves the FFP of multi-colored LED chips of the LED package.

An example display apparatus includes a liquid crystal panel; a light source plate including a printed circuit board disposed behind the liquid crystal panel, and a light source module mounted on the printed circuit board to supply light to the liquid crystal panel. The light source module includes a light emitting diode (LED) chip; a light guide provided to guide the light emitted from the LED chip; a light converter provided to convert a wavelength of light guided through the light guide, and disposed on a first surface of the light guide and attached to the printed circuit board; and a distributed Bragg reflector (DBR) layer disposed on a second surface of the light guide body and provided to improve a light conversion efficiency of the light conversion member.

The present disclosure relates to a composition, a substrate and a preparation method of a light reflection layer. The composition comprises: a matrix material and an additive, the matrix material including a solvent, reactant molecules and a material with reflection function dispersed in the solvent, wherein the reactant molecules is capable of undergoing cross-linking reaction under a first preset condition, and include monomer molecules and/or prepolymer molecules; the additive including a filler material that is in the form of powder or microspheres, capable of being dispersed in the matrix material, and filled between the crosslinking points of any adjacent reactant molecules to block the crosslinking reaction of some adjacent reactant molecules under the first preset condition.

A display device includes a circuit substrate and at least one light emitting diode (LED) packaging structure electrically connected to the circuit substrate. Each of the at least one LED packaging structure includes a plurality of LEDs, a plurality of transparent packaging structures, a molding layer, a redistribution structure and a common electrode. Each LED includes a first electrode, a semiconductor stack structure and a second electrode stacked with each other. The transparent packaging structures respectively surround the LEDs. The molding layer surrounds the transparent packaging structures. The redistribution structure is located on a first side of the molding layer and is electrically connected to the first electrodes of the LEDs. The common electrode is located on a second side of the molding layer and is electrically connected to the second electrodes of the LEDs.

Disclosed are a semiconductor structure, a manufacturing method of a semiconductor structure, and a light-emitting device. The semiconductor structure includes: a light-emitting structure including a plurality of light-emitting units, where an insulating structure is disposed between adjacent two light-emitting units; and a light-control layer, disposed on a side of the light-emitting structure, including a plurality of light-control regions regularly disposed and a substrate structure disposed between adjacent two light-control regions, one light-control region corresponding to at least one light-emitting unit, where the substrate structure includes a growth substrate layer structure and an etching stop layer structure stacked along a direction away from the light-emitting structure.

Disclosed are a semiconductor structure and a manufacturing method for the semiconductor structure. The semiconductor structure includes a light-emitting structure; a light control layer disposed on a side of the light-emitting structure, including a plurality of light control regions regularly arranged and a substrate structure located between the plurality of light control regions; where the plurality of light control regions include a wavelength conversion structure, and the wavelength conversion structure includes a quantum dot and a porous structure adsorbed with the quantum dot. In the present disclosure, the plurality of light control regions and the substrate structure are provided to ensure uniform light output, good directionality, high light extraction rate, and avoidance of light crosstalk in each light control region. The porous structure is utilized to adsorb the quantum dot and achieve a full color display, thereby improving resolution, simplifying a manufacturing process and reducing costs.

A light-emitting device is provided. The light-emitting device includes a circuit board and a connection board disposed on the circuit board and having a first pad, a second pad, and a third pad. The light-emitting device also includes a first light-emitting element disposed on the connection board and having a first electrode and a second electrode and a second light-emitting element adjacent to the first light-emitting element and having a third electrode and a fourth electrode. The light-emitting device further includes a light-converting layer disposed on the first light-emitting element and the second light-emitting element. The thermal expansion coefficient of the connection board is smaller than the thermal expansion coefficient of the circuit board.