Herein are provided anti-BCMA single domain antibodies (sdAb) prepared byte immunizing a llama with the ecto-domain of human B-cell maturation antigen (BCMA) that is preferentially expressed by mature B lymphocytes. By constructing a library of the heavy chain repertoire generated, VHH antibodies specific to the immunogen were isolated. The 13 unique example antibodies initially produced comprise CDR1, CDR2, and CDR3 sequences corresponding, respectively to SEQ NOs: 1-3, 4-6, 7-9, 10-12, 13-15, 16-18, 19-21, 22-24, 25-27, 28-30, 31-33, 34-36, 37-39; and related sequences. Also provided are multivalent antibodies comprising any one of the sdAbs, including bispecific T-cell engagers, bispecific killer cell engagers (BiKEs), and trispecific killer cell engagers (TriKEs). Also described are chimeric antigen receptors (CARs) for CAR-T therapy comprising any one of the aforementioned sdAbs. Uses of these molecules in the treatment of cancer or autoimmune diseases are also described, in particular hematological malignancies, such as multiple myeloma.

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

This semiconductor light emitting device includes an emission layer, a passivation layer on the emission layer, and a first adhesive layer on the passivation layer. The passivation layer may include a plurality of grooves, and the first adhesive layer may be disposed in each of the plurality of grooves. Arranging the first adhesive layer in the plurality of grooves may enhance fixability. The display device includes a plurality of semiconductor light emitting devices. The semiconductor light emitting devices may include a horizontal semiconductor light emitting device, a flip chip semiconductor light emitting device, or a vertical semiconductor light emitting device.

A method for manufacturing an LED structure includes forming a first semiconductor layer on a first substrate; performing a first implantation operation to form a first implanted region and a first non-implanted region in a second doping semiconductor layer of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer; performing a second implantation operation to form a second implanted region and a second non-implanted region in a fourth doping semiconductor layer of the second semiconductor layer; performing a first etch operation to remove a portion of the second semiconductor layer and expose at least the first non-implanted region; performing a second etch operation to expose a plurality of contacts of a driving circuit formed in the first substrate; and electrically connecting the first non-implanted region and the second non-implanted region with the plurality of contacts.

A display device includes a substrate in which a plurality of sub pixels are defined; a pair of low potential power lines are in a sub pixel of the plurality of sub pixels; and a plurality of light emitting diodes that overlap an area between the pair of low potential power lines. Each of the plurality of light emitting diodes includes a first semiconductor layer; an emission layer; a second semiconductor layer; a first insulating film that encloses side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer; a side electrode on the first insulating film; and a first electrode that is in contact with a bottom surface of the first semiconductor layer and a lower part of the side electrode.

A semiconductor device includes a semiconductor stack, a reflective structure, and a conductive structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active region located between the first semiconductor structure and the second semiconductor structure. The reflective structure is located at a side of semiconductor stack closed to the first semiconductor structure, and includes a first metal. The conductive structure locates between the reflective structure and the first semiconductor structure, and includes a first region overlapping with the active structure and a second region which does not overlap with the active structure. The first metal in the second region has a concentration smaller than 5 atomic percent.

A light-emitting diode and a light-emitting device are provided. A transparent conductive layer, a current blocking layer and a first metal reflective layer are sequentially arranged on a side of a second semiconductor layer away from an active layer. A side of the first metal reflective layer adjacent to the current blocking layer is a first Al reflective layer, and metal Al has high reflectivity in a short-wave band, increasing the reflection of light radiated by the active layer. Since there is no need to form an adhesion layer between the first Al reflective layer and the current blocking layer, there is no light absorption problem of the adhesion layer. A projection area of the first metal reflective layer is greater than or equal to that of the transparent conductive layer, so that the first metal reflective layer can cover a larger light-emitting surface, thereby further improving the light reflection.

The present invention generally relates to T cells that are modified to enhance the efficiency of adoptive cellular therapy by modulating dendritic cell activity, a composition comprising modified T cells, vectors and methods for the treatment of cancer comprising administering modified T cells. In particular, the present invention provides modified T cells for use in adoptive cellular therapies for the treatment of solid tumours.

The present invention provides a combination of an immune checkpoint modulator and a complex comprising a cell penetrating peptide, at least one antigen or antigenic epitope, and a TLR peptide agonist for use in medicine, in particular in the prevention and/or treatment of cancer. Moreover, the present invention also provides compositions, such as a pharmaceutical compositions and vaccines, which are useful in medicine, for example in the prevention and/or treatment of cancer.

The present invention generally relates to T cells that are modified to enhance the efficiency of adoptive cellular therapy by modulating dendritic cell activity, a composition comprising modified T cells, vectors and methods for the treatment of cancer comprising administering modified T cells. In particular, the present invention provides modified T cells for use in adoptive cellular therapies for the treatment of solid tumours.