The present invention relates to the CO.sub.2 and O.sub.2 remover. The CO.sub.2 and O.sub.2 remover comprises 65 to 85 weight percent (wt. %) of a nickel oxide (NiO), 5 to 20 wt. % of a magnesium oxide (MgO), wherein the weight ratio of the nickel oxide and the magnesium oxide (NiO/MgO) is 4 to 11, and wherein the wt. % is based on the weight of the CO.sub.2 and O.sub.2 remover.

A process chamber, such as for semiconductor processing equipment, is connected with a recovery unit. The recovery unit includes a first storage tank for buffer gas and a second storage tank for rare gas. Both storage tanks are connected with a column in the recovery unit. The recovery unit and process chamber can operate as a closed system. The rare gas can be transported at a variable flow rate while separation in the recovery unit operates at a constant flow condition.

The present disclosure relates to the technical field of semiconductors, and provides a vacuum system, a low-pressure vacuum process device, and a cutoff member. The vacuum system includes: a vacuum pump; an exhaust pipeline, wherein one end of the exhaust pipeline is used to communicate with a chamber to be evacuated, and the other end of the exhaust pipeline communicates with the vacuum pump; and a cutoff member, wherein the cutoff member is connected to the exhaust pipeline, the cutoff member includes a filter portion and a carrier portion, the filter portion includes a passage, the carrier portion includes an accommodation groove, and the passage communicates with the accommodation groove.

ABSTRACT An apparatus is for collecting a by-product in a semiconductor manufacturing process. The apparatus includes: a housing cooling channel on an inner wall thereof to cool exhaust gas which is temperature-controlled by a heater while being introduced through a gas inlet of an upper plate; an internal collecting tower including multiple vertical plates and multiple horizontal plates that are assembled, and condensing and collecting a by-product from the exhaust gas; a main cooling channel having a serpentine shape and cooling the exhaust gas uniformly by using coolant while passing through the internal collecting tower; and a multi-connection pipe sequentially supplying the coolant to the upper plate cooling channel, the housing cooling channel, and the main cooling channel and discharging the coolant, by using a supply pipe and a discharge pipe that are provided outside the housing.

A dry gas scrubber is disclosed. The dry gas scrubber is for treatment of an effluent stream and comprises: a chamber having an inlet for receiving the effluent stream, a cooler coupled with the inlet and configured to cool the effluent stream, and a resin chamber downstream of the cooler and configured to receive the effluent stream for treatment. In this way, the cooler is interposed between the process tool and the resin chamber and operates to cool the effluent stream prior to its being delivered to the resin chamber. Cooling the effluent stream in this way helps to improve the performance of the resin, even when the effluent stream is at an elevated temperature.

An apparatus for a dry gas scrubber includes: a cooling chamber defined by a housing having an inlet for receiving an effluent stream for treatment by the dry gas scrubber, an outlet for providing the effluent stream for treatment by the dry gas scrubber, and at least one cooling plate within the chamber, the cooling plate being thermally coupled with the housing and configured to deviate a direction of flow of the effluent stream when flowing from the inlet to the outlet. In this way, the cooling chamber is interposed between the process tool and the resin chamber of the dry gas scrubber and operates to cool the effluent stream prior to its being delivered to the resin chamber. Cooling the effluent stream in this way helps to improve the performance of the resin, even when the effluent stream is at an elevated temperature.

A reactor apparatus, includes: a reactor chamber having an inlet through which treatment liquid containing by-products is introduced and having an interior space; a burner at a lower end portion of the reactor chamber to burn waste gas; a guide member above the burner and configured to allow the treatment liquid to flow outwardly of the burner; a water reservoir between the burner and the guide member, the water reservoir having a double pipe structure having an inner wall portion and an outer wall portion, and through which water supplied through a water inlet is configured to flow between the inner wall portion and the outer wall portion; and a cover member coupled to an upper end portion of the water reservoir and configured to cover a space between the inner wall portion and the outer wall portion, wherein an upper end of the outer wall portion is above an upper end of the inner wall portion, wherein a plurality of bumps are on a bottom surface of the cover member spaced apart from each other in a circumferential direction, the plurality of bumps configured to form a gap of several hundred pm between the bottom surface of the cover member and an upper surface of the inner wall portion of the water reservoir.

A gas processing apparatus includes a duct, a partition plate and a liquid supply. The duct has therein a flow path through which a gas passes. The partition plate is configured to divide the flow path into multiple spaces, and is formed of a porous material, through which the gas passes, configured to retain a liquid. The liquid supply is configured to supply a dissolving liquid configured to dissolve a target component contained in the gas to the partition plate. The gas passing through the flow path is brought into contact with the dissolving liquid retained in the partition plate.

A substrate processing apparatus includes processing units, an exhaust path, a gas processing apparatus and a controller. Each processing unit is configured to process a substrate by using a chemical. A gas exhausted from the processing units flows through the exhaust path. The gas processing apparatus is provided in the exhaust path to remove a target component contained in the gas. The gas processing apparatus includes a duct, a partition plate and a liquid supply. The duct has therein a flow path. The partition plate divides the flow path into spaces, and is formed of a porous material, through which the gas passes, configured to retain a liquid. The liquid supply is configured to supply a dissolving liquid configured to dissolve the target component to the partition plate. The controller adjusts a flow rate of the dissolving liquid according to operation information indicating an operational status of the processing units.

Provided is an apparatus for treating waste gas of the electronics industry, and the apparatus includes: a reaction chamber in which an inlet and an outlet are formed and an inner space for purifying waste gas is formed; a first partition plate extending from an inner wall of the reaction chamber facing the inlet in a direction toward the inlet, dividing the inner space into a pre-treatment zone for collecting dust in the waste gas and a remaining purification zone; a second partition plate extending vertically downward from a ceiling of the reaction chamber, dividing the purification zone into a thermal decomposition zone for heating and thermally decomposing waste gas and a post-treatment zone; and a heater installed at the ceiling of the reaction chamber so as to be located in the thermal decomposition zone to thermally decompose a perfluorinated compound by heating waste gas introduced into the thermal decomposition zone; and a dry scrubber unit including one or more catalysts to collect at least one of the dust, a fluorine compound, and nitrous oxide (N2O) in waste gas introduced into the post-treatment zone.