A method and system for manufacturing and using a self-supporting structure in processing unit for adsorption or catalytic processes. The self-supporting structure has greater than 50% by weight of the active material in the self-supporting structure to provide an open-celled structure providing access to the active material. The self-supporting structures, which may be disposed in a processing unit, may be used in swing adsorption processes and other processes to enhance the recovery of hydrocarbons.

An aircraft environmental control system includes means for mixing and conditioning bleed air from a bleed air input and recirculation air from an aircraft interior to provide mixed, conditioned air to the aircraft interior. The system also includes a first contaminant removal device and a second contaminant removal device arranged in a path of at least part of the recirculation air, prior to the means for mixing and conditioning, and a valve (SV1) arranged to alternate flow of recirculation air through the first and second contaminant removal devices.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Provided is an oxygen concentration device that can facilitate easy and secure replacement work, such as attaching and detaching the adsorption cylinder while reducing the force applied from the oxygen concentration device body to the adsorption cylinder cartridge in the direction of detaching and thus ensuring the connection with the oxygen concentration device, wherein the axis line of the gas flow direction of the adsorption cylinder intersects with either connection axis in the end part for supplying pressurized air to the adsorption cylinder or the end part for extracting oxygen from the adsorption cylinder.

The present invention addresses to the use of NaY zeolite with a Si/Al ratio >2.6 as a solid adsorbent in the process of removing H.sub.2S from natural gas through a PSA process. The described adsorbent has the capacity of removing H.sub.2S from natural gas from offshore exploration platforms, enabling in situ regeneration. The experimental development proved the high capacity of capturing H.sub.2S by the NaY zeolite in consecutive cycles of pressurization, adsorption, depressurization and purging. This capture capacity remains at 74.2% of the initial capacity, remaining stable in subsequent cycles. The structure of the material maintained crystallinity above 95% in use, in 15 consecutive cycles, allowing the reuse of the adsorbent for a prolonged period of operation, preventing the solid from being constantly changed, which is quite common in a non-regenerative process.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

A method for separating at least one hydrocarbon from a feed containing a mixture of at least one hydrocarbon and nitrogen, comprising contacting the feed with an adsorbent comprising a porous support wherein the porous support comprises exchangeable cations and at least a portion of the exchangeable cations are organic cations.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Provided are apparatus and systems for performing a swing adsorption process. This swing adsorption process may involve performing a startup mode process prior to beginning a normal operation mode process to remove contaminants from a gaseous feed stream. The startup mode process may be utilized for swing adsorption processes, such as TSA and/or PSA, which are utilized to remove one or more contaminants from a gaseous feed stream.

Provided are apparatus and systems for performing a swing adsorption process. This swing adsorption process may involve performing a startup mode process prior to beginning a normal operation mode process to remove contaminants from a gaseous feed stream. The startup mode process may be utilized for swing adsorption processes, such as TSA and/or PSA, which are utilized to remove one or more contaminants from a gaseous feed stream.