Provided is an apparatus for treating waste gas of the electronics industry, and the apparatus includes: a reaction chamber in which an inlet and an outlet are formed and an inner space for purifying waste gas is formed; a first partition plate extending from an inner wall of the reaction chamber facing the inlet in a direction toward the inlet, dividing the inner space into a pre-treatment zone for collecting dust in the waste gas and a remaining purification zone; a second partition plate extending vertically downward from a ceiling of the reaction chamber, dividing the purification zone into a thermal decomposition zone for heating and thermally decomposing waste gas and a post-treatment zone; and a heater installed at the ceiling of the reaction chamber so as to be located in the thermal decomposition zone to thermally decompose a perfluorinated compound by heating waste gas introduced into the thermal decomposition zone; and a dry scrubber unit including one or more catalysts to collect at least one of the dust, a fluorine compound, and nitrous oxide (N2O) in waste gas introduced into the post-treatment zone.

Provided is an apparatus for treating waste gas of the electronics industry, and the apparatus includes: a reaction chamber in which an inlet and an outlet are formed and an inner space for purifying waste gas is formed; a first partition plate extending from an inner wall of the reaction chamber facing the inlet in a direction toward the inlet, dividing the inner space into a pre-treatment zone for collecting dust in the waste gas and a remaining purification zone; a second partition plate extending vertically downward from a ceiling of the reaction chamber, dividing the purification zone into a thermal decomposition zone for heating and thermally decomposing waste gas and a post-treatment zone; and a heater installed at the ceiling of the reaction chamber so as to be located in the thermal decomposition zone to thermally decompose a perfluorinated compound by heating waste gas introduced into the thermal decomposition zone; and a dry scrubber unit including one or more catalysts to collect at least one of the dust, a fluorine compound, and nitrous oxide (N2O) in waste gas introduced into the post-treatment zone.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

A system configured to capture CO.sub.2 and able to be washed of the captured CO.sub.2 includes a material including an ionic liquid configured to capture CO.sub.2 in response to exposure to a gas comprising CO.sub.2 and to a thermal energy source and an aerogel holding the ionic liquid therein. The system may also include a washing solution configured to wash the captured CO.sub.2 from the material.

A synergetic system for waste treatment is provided. The synergetic system includes a waste treatment system configured to perform biological treatment of waste. Additionally, the synergetic system includes a gas purification system configured to purify exhaust gas generated during the biological treatment of the waste. The synergetic system further includes a feeding system configured to feed excess heat from the gas purification system back to the waste treatment system. The waste treatment system is further configured to use the fed back excess heat for the biological treatment of the waste.

Systems for and methods of treating a fluid containing siloxanes, silanes and/or other silicon compounds. A hot box is configured to receive an initial flow of the fluid, react the flow with water at a temperature and pressure suitable for hydrolysis to generate a first treated flow, in which at least a portion is hydrolyzed to produce silicon dioxide and methane, and discharge the first treated flow. A solid removal mechanism can be configured to receive the first treated flow, separate at least a portion of the silicon dioxide as solid material, and discharge the remaining components as a second treated flow. Techniques of the present disclosure can lead to very low siloxane levels.

A waste peptone disposal system is provided, the system utilizing steam to increase the temperature of the waste peptone and provide active homogenous mixing inside a thermally insulated tank. Steam is introduced through a steam sparging system and directly applied to the waste peptone to reduce noxiousness, allowing the facility to dispose of the processed waste peptone through a wastewater system.

A carbon processing system comprises an air mover and a multi-stage reactor. The multi-stage reactor processes ambient air and generates carbon dioxide and generates exhausted gas released to ambient air. In operation, air contacts the base solution via the air mover. The air reacts with the base solution thereby generating a base solution having carbon dioxide and generating exhaust (absorption reaction). Next, the exhaust is released from the reactor. Next, heat is applied to the base solution having carbon dioxide thereby generating carbon dioxide and generating a base solution without carbon dioxide (desorption reaction). The base solution without carbon dioxide generated after applying heat is reusable in processing new air. The absorption reaction and desorption reaction are reversible reactions resulting in regeneration of the base solution into its form prior to contact with the air yielding high scalability and less processing volume as required by many conventional carbon processing techniques.

Embodiments disclosed herein provide an organic matter processing apparatus and method for the use thereof to convert organic matter into a ground and desiccated product. The organic matter processing apparatus includes a lid assembly that is positioned at the top or head of the processing apparatus and an air treatment system. The lid assembly is operative to open to allow a user to deposit organic matter into the processing apparatus or to remove a removable bucket contained therein. The lid assembly is operative to close and provide an odor containing seal that prevents or substantially mitigates escape of odor. The air treatment system uniformly distributes untreated air through an air treatment chamber to convert the untreated air to treated air, which is exhausted out of the processing apparatus.

An apparatus for treating gaseous pollutants includes a gas inlet part, a first treatment unit, a second treatment unit and a non-mechanical flow-guiding device. The gas inlet part includes a gas inlet chamber and at least one guide pipe. The guide pipe communicates with the gas inlet chamber and guides an effluent stream from a semiconductor process to the gas inlet chamber. The first treatment unit is coupled to a bottom end of the gas inlet part and is configured to abate the effluent stream. The non-mechanical flow-guiding device is coupled to the first treatment unit. The flow-guiding device is configured to guide the effluent stream to move toward an opening. The second treatment unit is coupled to the flow-guiding device via the opening, receives the effluent stream from the first treatment unit and further abates the effluent stream.