Provided are a method for supplying water of specified concentration, including: a step of adding at least two liquids, a conductive first liquid and a non-conductive second liquid, to ultrapure water to produce water of specified concentration containing a first liquid-component and a second liquid-component at specified concentrations, in which a mixed solution in which the first liquid and the second liquid are mixed at a specified mixing ratio in advance is prepared; and the mixed solution is added to the ultrapure water so that a conductivity or specific resistance of the ultrapure water after the addition satisfies a specified value, and an apparatus therefor.

A substrate cleaning method and a substrate cleaning apparatus are provided. The substrate cleaning method includes a first step of applying a chemical solution to a lower surface of a substrate, and a second step of subsequently applying a bubble-containing liquid to the lower surface of the substrate.

Systems and methods are described for supplying a rinsing liquid including ultrapure water and an ammonia gas. The system includes an ultrapure water source and a gas mixture source in fluid communication with a contactor. The gas mixture includes ammonia gas and a carrier gas. The system includes a control unit configured to adjust a flow rate of the ultrapure water source such that an operational pressure of the contactor remains below a pressure threshold. The system includes a compressor configured to remove a residual transfer gas out of the contactor. The contactor generates a rinsing liquid having ultrapure water and a concentration of the ammonia gas dissolved therein. The system includes a pump in fluid communication between the contactor and an outlet. The pump is configured to deliver the rinsing liquid having a gaseous partial pressure below the pressure threshold at the outlet.

A specific resistance value adjustment apparatus includes: a hollow fiber membrane module; a module passing pipe which passes through the hollow fiber membrane module; a bypassing pipe which bypasses the hollow fiber membrane module; a liquid discharge pipe which communicates with the module passing pipe and the bypassing pipe through a joint portion; a first flow rate detection unit which detects a first flow rate of a liquid flowing to at least one of a liquid supply pipe and the liquid discharge pipe; a control valve which opens and closes the module passing pipe; and a control unit which sets an opening degree of the control valve in response to the first flow rate detected by the first flow rate detection unit.

Embodiments of the present application provide a liquid supply system and a liquid supply method. The liquid supply system includes: a mixing tank, the mixing tank being connected to at least a first injection pipe, a second injection pipe and a replenishing pipe; the first injection pipe and the second injection pipe being configured to inject a first liquid and a second liquid into the mixing tank respectively, so as to form a mixed liquid; a parameter acquisition module configured to acquire a concentration of the first liquid in the mixed liquid; and a treatment module configured to control, based on the acquired concentration of the first liquid and a preset concentration of the first liquid, the replenishing pipe to inject the first liquid with a first flow rate into the mixing tank, or inject the second liquid with a second flow rate into the mixing tank.

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Exemplary slurry delivery assemblies may include a slurry fluid source. The assemblies may include a flurry delivery lumen having a lumen inlet and a lumen outlet. The lumen inlet may be fluidly coupled with an output of the slurry fluid source. The assemblies may include a deagglomeration tube fluidly coupled with the lumen outlet. The deagglomeration tube may include a tube inlet and a tube outlet. The assemblies may include one or more ultrasonic transducers coupled with the deagglomeration tube.

A gas mixing device includes: a cylindrical portion including an upper surface which is closed; a gas outflow passage formed in a central portion of a bottom surface of the cylindrical portion, and extends downward; a plurality of gas stream guide walls disposed to be spaced apart from each other in a circumferential direction along an edge of an opening formed by the gas outflow passage in the bottom surface, and installed to be rotationally symmetrical to a center of the cylindrical portion, the gas stream guide walls protruding toward the upper surface; and a gas inlet part installed between the gas stream guide walls and an inner peripheral surface of the cylindrical portion, and into which a gas to be mixed flows.

A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

The present document discloses a gas inlet device (21, 21a-21k) for use in a reactor for gas treatment of a substrate. The gas inlet device comprises an inlet niche having a back wall (233), and a side wall (234, 235) extending in a downstream direction (F) from the back wall (233) towards an inlet niche opening (212), an impingement surface (243), a gas orifice (210), which is configured to direct a gas flow towards the impingement surface (243), and a taper surface (244, 245), extending downstream of the impingement surface (243), such that a flow gap (213) having, along the downstream direction (F), gradually increasing cross sectional area, is formed between the side wall (234, 235) and the taper surface (244, 245).

The document further discloses a mixing device, a gas outlet device a reactor and the use of such reactor.