Materials systems resistant to penetration of molten salts and may be present within a molten-salt-facing wall of a device for containing a molten salt bath at an elevated temperature, and molten-salt-facing walls and devices formed by such materials systems. A first layer of such a system defines an outer surface for direct contact with the molten salt bath, and resists erosion and corrosion and is penetrable by the molten salt at the elevated temperature. A second layer is located adjacent to the first layer and exhibits little or no wetting by the molten salt so that at least a portion of a thickness of the second layer is not penetrable by the molten salt. A third layer is located adjacent to the second layer and is porous and exhibits a low thermal conductivity at the elevated temperature.

To provide a reactor to improve evenness in the thickness of shell metals coated on the surface of core particles by increasing area sizes in the reactor chamber to control electric potentials, the present invention is configured to comprise a top surface able to move up and down while serving as a working electrode, a wall serving as a working electrode, a bottom surface, a standard electrode, a power supplying part and a solution injecting part, wherein the top surface can move up and down automatically by an electric motor or manually. Also, the top surface is configured to be suitable for the interior diameter of the reactor chamber, for solutions inside the reactor chamber not to leak from the top surface or from the crevice between the top surface and the wall of the reactor chamber. The bottom surface of the reactor chamber may comprise an impeller or an ultrasonic wave diffuser to bring about even diffusion in the reactor chamber.

A new type of burning device for producing hydrohalogen compounds.

A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B.sub.2F.sub.4.

A reactor system for high temperature reactions of reactants includes at least one reactant containing carbon. The reactor includes a reactor, a liquid media disposed within the reactor, and a solid carbon reaction product. The liquid media does not react irreversibly with the reactant to form products, and the liquid media wets at least a portion of a surface within the reactor. The solid carbon reaction product does not contact at least the portion of the surface within the reactor where the liquid media wets the portion of the surface within the reactor.

A new type of burning device for producing hydrohalogen compounds.

To provide a reactor to improve evenness in the thickness of shell metals coated on the surface of core particles by increasing area sizes in the reactor chamber to control electric potentials, the present invention is configured to comprise a top surface able to move up and down while serving as a working electrode, a wall serving as a working electrode, a bottom surface, a standard electrode, a power supplying part and a solution injecting part, wherein the top surface can move up and down automatically by an electric motor or manually. Also, the top surface is configured to be suitable for the interior diameter of the reactor chamber, for solutions inside the reactor chamber not to leak from the top surface or from the crevice between the top surface and the wall of the reactor chamber. The bottom surface of the reactor chamber may comprise an impeller or an ultrasonic wave diffuser to bring about even diffusion in the reactor chamber.

A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B.sub.2F.sub.4.