Catalysts, catalytic materials having catalysts present on supports and catalytic methods are provided. The catalysts, catalytic material and methods are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane.

Catalysts, catalytic materials having catalysts present on supports and catalytic methods are provided. The catalysts, catalytic material and methods are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane.

The invention relates to a composition that contains a first semiconductor SC1, particles that comprise one or more element(s) M in the metal state selected from among an element of groups IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA and VA of the periodic table, and a second semiconductor SC2 that comprises indium oxide, with said first semiconductor SC1 being in direct contact with said particles that comprise one or more element(s) M in the metal state, with said particles being in direct contact with said second semiconductor SC2 that comprises indium oxide in such a way that the second semiconductor SC2 covers at least 50% of the surfaces of the particles that comprise one or more element(s) M in the metal state. The invention also relates to its preparation method as well as its application of photocatalysis.

The invention relates to a composition that contains a first semiconductor SC1, particles that comprise one or more element(s) M in the metal state selected from among an element of groups IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA and VA of the periodic table, and a second semiconductor SC2 that comprises indium oxide, with said first semiconductor SC1 being in direct contact with said particles that comprise one or more element(s) M in the metal state, with said particles being in direct contact with said second semiconductor SC2 that comprises indium oxide in such a way that the second semiconductor SC2 covers at least 50% of the surfaces of the particles that comprise one or more element(s) M in the metal state. The invention also relates to its preparation method as well as its application of photocatalysis.

Methods, systems, and compositions related to the recycling and/or recovery of activating materials from activated aluminum are disclosed. In one embodiment, an aqueous solution's composition may be controlled to maintain aluminum ions dissolved in solution during reaction of an activated aluminum. In another embodiment, aluminum hydroxide containing the activating materials may be dissolved into an aqueous solution to isolate the activating materials.

A bimetal oxysulfide solid-solution catalyst is provided. The bimetal oxysulfide solid-solution catalyst is represented by the following formula:
Cu.sub.xM.sup.(2).sub.yO.sub.zS.sub.γ wherein M.sup.(2) includes monovalent Silver (Ag), divalent Zinc (Zn), Manganese (Mn), Nickel (Ni), Cobalt (Co), and Tin (Sn.sup.II), trivalent Indium (In), Cerium (Ce), Antimony (Sb), and Gallium (Ga), tetravalent Tin (Sn.sup.IV), or pentavalent Molybdenum (Mo), 0<y<0.3, 0.7<x<1.0, 0<z<0.5, and 0.5<γ<1.0. In addition, a manufacturing method of the bimetal oxysulfide solid-solution catalyst and applications of the bimetal oxysulfide solid-solution catalyst are also provided.

A bimetal oxysulfide solid-solution catalyst is provided. The bimetal oxysulfide solid-solution catalyst is represented by the following formula:
Cu.sub.xM.sup.(2).sub.yO.sub.zS.sub.γ wherein M.sup.(2) includes monovalent Silver (Ag), divalent Zinc (Zn), Manganese (Mn), Nickel (Ni), Cobalt (Co), and Tin (Sn.sup.II), trivalent Indium (In), Cerium (Ce), Antimony (Sb), and Gallium (Ga), tetravalent Tin (Sn.sup.IV), or pentavalent Molybdenum (Mo), 0<y<0.3, 0.7<x<1.0, 0<z<0.5, and 0.5<γ<1.0. In addition, a manufacturing method of the bimetal oxysulfide solid-solution catalyst and applications of the bimetal oxysulfide solid-solution catalyst are also provided.

The present invention discloses photostable composite of indium gallium nitride and zinc oxide for solar water splitting, comprising Indium content in the range of 1-40 wt %, Ga content in the range of 1 to 15 wt %, nitrogen content in the range of 0.1 to 5 wt %, and the remaining is ZnO. The combustion synthesis comprises the steps of: (a) dissolving 45 to 55 wt % urea, 75 to 80 wt % Zinc nitrate, 3 to 5 wt % Gallium nitrate, and 15 to 20 wt % Indium nitrate in water with stirring until a homogenous solution is formed; and (b) heating the homogenous solution of step (a) at a temperature in the range of 450-550 [deg.]C. for period in the range of 2 to 20 min to obtain the photostable composite.

The present invention discloses photostable composite of indium gallium nitride and zinc oxide for solar water splitting, comprising Indium content in the range of 1-40 wt %, Ga content in the range of 1 to 15 wt %, nitrogen content in the range of 0.1 to 5 wt %, and the remaining is ZnO. The combustion synthesis comprises the steps of: (a) dissolving 45 to 55 wt % urea, 75 to 80 wt % Zinc nitrate, 3 to 5 wt % Gallium nitrate, and 15 to 20 wt % Indium nitrate in water with stirring until a homogenous solution is formed; and (b) heating the homogenous solution of step (a) at a temperature in the range of 450-550 [deg.]C. for period in the range of 2 to 20 min to obtain the photostable composite.

A catalyst comprising chromia and at least one additional metal or compound thereof and wherein the catalyst has a total pore volume of greater than 0.3 cm.sup.3/g and the mean pore diameter is greater than or equal to 90 Å, wherein the total pore volume is measured by N2 adsorption porosimetry and the mean pore diameter is measured by N.sub.2 BET adsorption porosimetry, and wherein the at least one additional metal is selected from Li, Na, K, Ca, Mg, Cs, Sc, Al, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, In, Pt, Cu, Ag, Au, Zn, La, Ce and mixtures thereof.