A method for producing a film includes: coating a surface of a substrate with a composition containing a polymer having a structural unit represented by formula (1) and having a number average molecular weight of 13000 or more and a solvent, heating a coating film formed by the coating, and removing, with a rinsing liquid, a part of the coating film after the heating, wherein the rinsing liquid to be used contains a basic compound. In the formula (1), Y.sup.1 is a single bond, —CO—NR.sup.2—, a divalent aromatic ring group, a divalent group containing —O—, or a divalent group containing —CO—NR.sup.2—. A.sup.1 is a single bond, —O—, —S—, or —NR.sup.3—. R.sup.1 is a hydrogen atom, a monovalent hydrocarbon group, a monovalent halogenated hydrocarbon group, or a monovalent group having a heterocyclic structure.

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A protective, sacrificial, water-reversible, coating composition for the protection of substrates comprised of water, a volatile base, a film-forming acrylic polymer in a water dispersion form, a compatabilizing polymer, specifically poly (2-ethyl-2-oxazoline), a poly acidic polymer (pH specific in terms of its solubility), wherein said coating is both water applied and water reversible or re-soluble under specific pH conditions.

Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

A polypeptide including a region A, a region B, and a region C, a photoresist composition including the polypeptide, and a method of forming patterns by using the photoresist composition.

An all solution-processed deposition includes a non-water soluble, non-self-cracking film deposited by a solution process (e.g., spray, dip, spin coat, and the like), a water soluble, self-cracking film deposited by a solution process (e.g., spray, dip, spin coat, and the like), cracking of the film, and filling the cracks with a metal that is deposited in solution (e.g., by electroless disposition). A transparent substrate having a cracked water insoluble, non-self-cracking film surface coating includes a plurality of fissures therein extending to and exposing portions of the surface of the underlying transparent substrate is useful for producing a transparent conducting film.

A substrate structure having a cold sprayed layer and a method for manufacturing the same are provided. The substrate structure having the cold sprayed layer includes a base layer and the cold sprayed layer. The cold sprayed layer is formed on a predetermined area of the base layer by spraying and dissolving. An included angle is formed between at least one side surface of the cold sprayed layer and the base layer.

A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.

A method for structured coating of a surface of a substrate. The surface includes spaced optical elements and at least partially metallic elements provided adjacent the optical elements. After the application of the method, the optical elements should be completely covered with the coating, whereas at least some of the metallic elements should not be coated on the major part of their surface. The method includes: a) providing the substrate with the spaced optical elements and metallic elements; b) applying a sacrificial material to at least some of the metallic elements to form sacrificial spots; c) coating the surface of the substrate with a layer system; and d) detaching the sacrificial spots from the substrate, wherein the regions of the layer system on the sacrificial spots are also detached from the substrate. The application of the sacrificial material is carried out at least partially by jetting.

A method of creating a design on complex curves and irregular contours of a protective helmet, quickly and without having to first disassemble the helmet. A design is transferred to a clear film/acetate, which is then exposed onto a photoresist mask, transferring the design to the photoresist mask. The mask is washed out creating blast-able areas in the design mask. The mask is adhered to an area of the helmet, which is otherwise covered with a sealed protective bag. Sandblasting/abrasive-blasting etches portions of the helmet surface through the blast-able area of the mask. Various colors or other special effects may be painted/applied onto the etched portions of the helmet surface. The protective bag and photoresist mask can be removed, and the painted areas buffed/polished in a final step.

Selective deposition methods are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.