Compositions are provided that include having at least 95% by weight of a taxane, or a pharmaceutically acceptable salt thereof, where the particles have a mean bulk density between about 0.050 g/cm.sup.3 and about 0.15 g/cm.sup.3, and/or a specific surface area (SSA) of at least 18 m.sup.2/g, 20 m.sup.2/g, 25 m.sup.2/g, 30 m.sup.2/g, 32 m.sup.2/g, 34 m.sup.2/g, or 35 m.sup.2/g. Methods for making and using such compositions are also provided.

Compositions are provided that include having at least 95% by weight of a taxane, or a pharmaceutically acceptable salt thereof, where the particles have a mean bulk density between about 0.050 g/cm.sup.3 and about 0.15 g/cm.sup.3, and/or a specific surface area (SSA) of at least 18 m.sup.2/g, 20 m.sup.2/g, 25 m.sup.2/g, 30 m.sup.2/g, 32 m.sup.2/g, 34 m.sup.2/g, or 35 m.sup.2/g. Methods for making and using such compositions are also provided.

The present disclosure provides an apparatus and methods of use for isolating particles. An example apparatus includes (a) a vessel defining a pressurizable chamber, wherein the vessel includes a distal end and a proximal end, (b) an inlet of the pressurizable chamber at the proximal end of the vessel, (c) a nozzle positioned within the pressurizable chamber, wherein the nozzle includes an inlet tube in fluid communication with the inlet of the pressurizable chamber, wherein the nozzle includes an outlet aperture, wherein the nozzle is adjustable to alter a distance between the proximal end of the vessel and the outlet aperture of the nozzle, and wherein the nozzle is adjustable to alter an angle between a longitudinal axis of the vessel and a longitudinal axis of the nozzle, and (d) an outlet of the pressurizable chamber at the distal end of the vessel.

Compositions are provided that include having at least 95% by weight of a taxane, or a pharmaceutically acceptable salt thereof, where the particles have a mean bulk density between about 0.050 g/cm.sup.3 and about 0.15 g/cm.sup.3, and/or a specific surface area (SSA) of at least 18 m.sup.2/g, 20 m.sup.2/g, 25 m.sup.2/g, 30 m.sup.2/g, 32 m.sup.2/g, 34 m.sup.2/g, or 35 m.sup.2/g. Methods for making and using such compositions are also provided.

Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

Embodiments relate to forming a thin film of nanoscale thickness by depositing a mixture of a precursor and a supercritical fluid onto a surface of a substrate and removing the supercritical fluid from the surface of the substrate. The mixture is sprayed onto the surface by a spraying module. A layer of the precursor is formed on at least a portion of the surface. Molecules of the supercritical fluid is removed from the surface. The surface is exposed to plasma radical to transform the layer of the precursor into a solid thin film. In some embodiments, molecules of the precursor chemically bond with molecules of the supercritical fluid in the mixture. The molecules of the supercritical fluid can be decoupled from the molecules of the precursor before the layer of the precursor is formed.

Compositions are provided that include having at least 95% by weight of a taxane, or a pharmaceutically acceptable salt thereof, where the particles have a mean bulk density between about 0.050 g/cm.sup.3 and about 0.15 g/cm.sup.3, and/or a specific surface area (SSA) of at least 18 m.sup.2/g, 20 m.sup.2/g, 25 m.sup.2/g, 30 m.sup.2/g, 32 m.sup.2/g, 34 m.sup.2/g, or 35 m.sup.2/g. Methods for making and using such compositions are also provided.

Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.

Embodiments relate to surface treating a substrate, spraying precursor onto the substrate using supercritical carrier fluid, and post-treating the substrate sprayed with the precursor to form a layer with nanometer thickness of material on the substrate. A spraying assembly for spraying the precursor includes one or more spraying modules and one or more radical injectors at one or more sides of the spraying module. A differential spread mechanism is provided between the spraying module and the radical injectors to inject spread gas that isolates the sprayed precursor and radicals generated by the radical injectors. As relative movement between the substrate and the spraying assembly is made, portions of the substrate is exposed to first radicals, sprayed with precursors either one of the spraying modules or both spraying modules using supercritical carrier fluid, and then exposed to second radicals again.