Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH.sub.2— moieties, either as terminal groups (—SiH.sub.3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C.sub.1-C.sub.6 linear, branched, or cyclic alkyl- group, a C.sub.1-C.sub.6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Methods for treating cellulosic materials comprising introducing a liquid treating composition into the cellulosic material, the treating composition comprising a solution prepared from at least: (i) one or more of a copper amine complex or copper ammine complex, such as copper tetraamine carbonate, (ii) one or more of ammonia or a water-soluble amine and (iii) water; and exposing the cellulosic material provided thereby to carbon dioxide and/or carbonic acid to provide treated cellulosic material, and treated cellulosic materials prepared thereby.

One variation of a method for fabricating a dermal heatsink includes: fabricating a substrate defining an interior surface, an exterior surface opposite the interior surface, and an open network of pores extending between the interior surface and the exterior surface; activating surfaces of the substrate and walls of the open network of pores; applying a coating over the substrate to form a heatsink, the coating comprising a porous, hydrophilic material and defining a void network; removing an excess of the coating from the substrate to clear blockages within the open network of pores by the coating; hydrating the heatsink during a curing period; heating the heatsink during the curing period to increase porosity of the coating applied over surfaces of the substrate; and rinsing the heatsink with an acid to decarbonate the coating along walls of the open network of pores in the substrate.

A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.

Antimicrobial metal ion coatings. In particular, described herein are coatings including an anodic metal (e.g., silver and/or zinc and/or copper) that is co-deposited with a cathodic metal (e.g., palladium, platinum, gold, molybdenum, titanium, iridium, osmium, niobium or rhenium) on a substrate (including, but not limited to absorbable/resorbable substrates) so that the anodic metal is galvanically released as antimicrobial ions when the apparatus is exposed to a bodily fluid. The anodic metal may be at least about 25 percent by volume of the coating, resulting in a network of anodic metal with less than 20% of the anodic metal in the coating fully encapsulated by cathodic metal.

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features.

Methods for treating cellulosic materials comprising introducing a liquid treating composition into the cellulosic material, the treating composition comprising a solution prepared from at least: (i) one or more of a copper amine complex or copper ammine complex, such as copper tetraamine carbonate, (ii) one or more of ammonia or a water-soluble amine and (iii) water; and exposing the cellulosic material provided thereby to carbon dioxide and/or carbonic acid to provide treated cellulosic material, and treated cellulosic materials prepared thereby.

The disclosure relates to a method for coating a substrate with a lacquer. First, the lacquer is uniformly applied to the substrate. Then, the solvent proportion of the lacquer applied to the substrate is reduced, and the coated substrate is exposed to a solvent atmosphere. In some embodiments, the lacquer is heated. The invention also relates to a device for planarising a lacquer layer.

Methods for treating cellulosic materials comprising introducing a liquid treating composition into the cellulosic material, the treating composition comprising a solution prepared from at least: (i) one or more of a copper amine complex or copper ammine complex, such as copper tetraamine carbonate, (ii) one or more of ammonia or a water-soluble amine and (iii) water; and exposing the cellulosic material provided thereby to carbon dioxide and/or carbonic acid to provide treated cellulosic material, and treated cellulosic materials prepared thereby.