A disposable glove and a method for making the disposable glove that reduces or eliminates glove cuff roll-down. The disposable glove includes a treated area on the interior surface of the glove that extends from the hand area to a portion of the wrist-forearm area of the glove but such that at least a portion of the interior near the glove opening is untreated. The untreated portion of the interior surface of the disposable glove resists glove cuff roll-down when the glove is positioned on a user's hand and forearm.

In one embodiment, the present application discloses a surface binding compound of the Formula I or Formula II:

##STR00001##

wherein the variables EG, EG1, SP1, SP2, SP3, Ar and BG are as defined herein. In another embodiment, the application discloses a method for forming a coating on a surface of a substrate using the surface binding compound of the Formula I or Formula II.

The present disclosure relates to a method of reactivating the surface of an organic paint coating, a method of facilitating adhesion of a further coating to the organic paint coating, and a substrate having a reactivated organic paint coating. There is also disclosed a surface reactivation treatment for an organic paint coating. The reactivation method also facilitates adhesion of the organic paint coating to further coating(s) across a broad application window.

A substrate treatment method for treating a substrate, includes: (a) applying a coating solution to a front surface of the substrate by a spin coating method to form a coating film; (b) supplying a solvent for the coating solution to a projection of the coating film formed at a front surface peripheral edge of the substrate at (a); and (c) rotating the substrate in a state where the supply of the solvent is stopped, to move a top of the projection to an outside in a radial direction of the substrate. (b) and (c) are repeatedly performed. The projection is a buildup of the coating solution protruding from the coating film.

A substrate treatment method includes a first gas treating step, a water-repellency treatment step, and a spraying step. In the first gas treating step, a first gas is supplied to the substrate inside the chamber in a state in which the inside of the chamber is decompressed. The first gas includes gas of an organic solvent. The water-repellency treatment step is executed after the first gas treating step. In the water-repellency treatment step, the inside of the chamber is in the decompressed state, and a water-repellent agent is supplied to the substrate inside the chamber. The spraying step is executed after the water-repellency treatment step. In the spraying step, the inside of the chamber is in the decompressed state, and a first liquid is sprayed over the substrate inside the chamber. The first liquid includes liquid of an organic solvent.

A structure body includes a base material and a siloxane based molecular membrane formed on the base material by use of an organic compound represented by Formula (1) or Formula (2): ##STR00001##
wherein any one of R1 to R5 is an amino group, others of R1 to R5 are each independently hydrogen or an alkyl group, R7 to R9 are each independently any one of hydroxy group, alkoxy group, alkyl group, and phenyl group on condition that one or more of R7 to R9 are each independently a hydroxy group or an alkoxy group, and R6 is an alkyl group.

According to various embodiments, a cover is sealed over a metasurface on a substrate to create a sealed chamber. Liquid crystal, or another tunable refractive index dielectric material, is positioned within the sealed chamber around optical structures of the metasurface before or after the cover is sealed. For example, the liquid crystal may be injected through small vias or holes to fill a sealed chamber. In some embodiments, a glass cover is shaped or patterned with photoresist to protrude into the sealed chamber to reduce the thickness of the liquid crystal used to fill the sealed chamber. A driver to control the metasurface may be, for example, integrated within the substrate, be attached to exposed bond pads of the metasurface, and/or be embodied as a control layer connected to the metasurface through the substrate by through-substrate vias (TSVs).

The present disclosure relates to a method for manufacturing a film for a decoration element, the method including depositing two or more islands on one surface of a film; and forming a pattern portion by dry etching the film using the island as a mask.

One variation of a method for fabricating a dermal heatsink includes: fabricating a substrate defining an interior surface, an exterior surface opposite the interior surface, and an open network of pores extending between the interior surface and the exterior surface; activating surfaces of the substrate and walls of the open network of pores; applying a coating over the substrate to form a heatsink, the coating comprising a porous, hydrophilic material and defining a void network; removing an excess of the coating from the substrate to clear blockages within the open network of pores by the coating; hydrating the heatsink during a curing period; heating the heatsink during the curing period to increase porosity of the coating applied over surfaces of the substrate; and rinsing the heatsink with an acid to decarbonate the coating along walls of the open network of pores in the substrate.

A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.